High-Gain Complementary Inverter with Ambipolar Thin Film Transistors and Fabrication Thereof

Abstract

The present invention relates to a high gain complementary inverter with ambipolar thin film transistors and fabrication thereof, comprising: a gate layer, a silica layer, a first active layer, a first source, a first drain, a second active layer, a second source and a second drain for fabrication cost and complexity reduction.