Browsing by Author "Lo, Chieh-Ting"

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Al-SiO2-Y2O3-SiO2-poly-Si Thin-Film Transistor Nonvolatile Memory Incorporating a Y2O3 Charge Trapping Layer
(2013)
Pan, Tung-Ming
;
Yen, Li-Chen
;
Mondal, Somnath
;
Lo, Chieh-Ting
;
Chao, Tien-Sheng
In this letter, we investigate the structural properties and electrical characteristics of the Al-SiO2-Y2O3-SiO2-poly-Si (AOYOP) thin-film transistor (TFT) nonvolatile memory device. The composition of Y2O3 charge-trapping layer was analyzed using X-ray photoelectron spectroscopy. The Y2O3 AOYOP TFT memory device exhibited a large memory window of 2.5 V, a long charge retention time of ten years with a minimal charge loss of similar to 15%, and a better endurance performance for P/E cycles up to 10(5). (c) 2013 The Electrochemical Society. All rights reserved.
High-kappa Eu2O3 and Y2O3 Poly-Si Thin-Film Transistor Nonvolatile Memory Devices
(2013-07-01)
Pan, Tung-Ming
;
Yen, Li-Chen
;
Huang, Sheng-Hao
;
Lo, Chieh-Ting
;
Chao, Tien-Sheng
In this paper, we have successfully fabricated low-temperature polycrystalline silicon thin-film transistor (LTPS-TFT) nonvolatile memory devices employing high-kappa Eu2O3 and Y2O3 films as the charge trapping layer. The LTPS-TFT memory device uses band-to-band tunneling-induced hot hole injection and gate Fowler-Nordheim injection as the program and erase methods, respectively. Compared with the Y2O3 film, the LTPS-TFT memory device using an Eu2O3 charge-trapping layer exhibited a lower subthreshold swing and a larger memory window, a smaller charge loss, and a better endurance performance, presumably because of the higher charge-trapping efficiency of the Eu2O3 film.