Al-SiO2-Y2O3-SiO2-poly-Si Thin-Film Transistor Nonvolatile Memory Incorporating a Y2O3 Charge Trapping Layer

Abstract

In this letter, we investigate the structural properties and electrical characteristics of the Al-SiO2-Y2O3-SiO2-poly-Si (AOYOP) thin-film transistor (TFT) nonvolatile memory device. The composition of Y2O3 charge-trapping layer was analyzed using X-ray photoelectron spectroscopy. The Y2O3 AOYOP TFT memory device exhibited a large memory window of 2.5 V, a long charge retention time of ten years with a minimal charge loss of similar to 15%, and a better endurance performance for P/E cycles up to 10(5). (c) 2013 The Electrochemical Society. All rights reserved.