Al-SiO2-Y2O3-SiO2-poly-Si Thin-Film Transistor Nonvolatile Memory Incorporating a Y2O3 Charge Trapping Layer
| dc.citation.epage | P85 | en_US |
| dc.citation.issue | 10 | en_US |
| dc.citation.spage | P83 | en_US |
| dc.citation.volume | 2 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Pan, Tung-Ming | en_US |
| dc.contributor.author | Yen, Li-Chen | en_US |
| dc.contributor.author | Mondal, Somnath | en_US |
| dc.contributor.author | Lo, Chieh-Ting | en_US |
| dc.contributor.author | Chao, Tien-Sheng | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:32:09Z | |
| dc.date.available | 2014-12-08T15:32:09Z | |
| dc.date.issued | 2013 | en_US |
| dc.description.abstract | In this letter, we investigate the structural properties and electrical characteristics of the Al-SiO2-Y2O3-SiO2-poly-Si (AOYOP) thin-film transistor (TFT) nonvolatile memory device. The composition of Y2O3 charge-trapping layer was analyzed using X-ray photoelectron spectroscopy. The Y2O3 AOYOP TFT memory device exhibited a large memory window of 2.5 V, a long charge retention time of ten years with a minimal charge loss of similar to 15%, and a better endurance performance for P/E cycles up to 10(5). (c) 2013 The Electrochemical Society. All rights reserved. | en_US |
| dc.identifier.doi | 10.1149/2.002310ssl | en_US |
| dc.identifier.issn | 2162-8742 | en_US |
| dc.identifier.journal | ECS SOLID STATE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/2.002310ssl | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/22628 | |
| dc.identifier.wosnumber | WOS:000322995700002 | |
| dc.language.iso | en_US | en_US |
| dc.title | Al-SiO2-Y2O3-SiO2-poly-Si Thin-Film Transistor Nonvolatile Memory Incorporating a Y2O3 Charge Trapping Layer | en_US |
| dc.type | Article | en_US |