Browsing by Author "Lo, DK"

Now showing 1 - 2 of 2

An improved interface characterization technique for a full-range profiling of oxide damage in ultra-thin gate oxide CMOS devices
(2003)
Chen, SJ
;
Lin, TC
;
Lo, DK
;
Yang, JJ
;
Chung, SS
In this paper, an improved gate-diode technique has been developed for the interface characterization on both n- and p-MOSFET's with gate oxide in the direct tunneling regime. This method has been demonstrated successfully for measuring oxide damage in all of the channel, space-charge (or junction), and drain extension regions in 20Angstrom ultra-thin gate oxide devices. As an application of the present method, the lateral profile of localized oxide damage due to Negative Bias Temperature Instability (NBTI) or Hot Carrier (HC) effect has been demonstrated. It provides us an understanding of the correlation between the device degradation and various stress-induced oxide damage in CMOS devices.
Localization of NBTI-induced oxide damage in direct tunneling regime gate oxide pMOSFET using a novel low gate-leakage gated-diode (L-2-GD) method
(2002)
Chung, SS
;
Lo, DK
;
Yang, JJ
;
Lin, TC
;
電子工程學系及電子研究所
As gate oxide thickness reduces, previous reported methods can not work well for very thin gate oxide devices as a result of the measured leakage current through the gate oxide. For the first time, a novel Low gate Leakage Gate-Diode (L-2-GD) method has been developed for the interface characterization of MOSFET devices with gate oxide in the direct tunneling regime. Three-peak experimental results, as seen from DCIV measurement, can be easily obtained from this L-2-GD method. This method has been demonstrated successfully for the ultra-thin (12-20Angstrom) gate oxide device. Also, by using this new technique, the localized oxide damage due to NBTI or HC (Hot Carrier) stress effect can be identified simply from the measured drain currents. Therefore, this L-2-GD technique is well suited for the characterization of very thin gate oxide reliabilities, and in particular for the nano-scale CMOS devices.