Browsing by Author "Lo, Shih-Ching"

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A quantum hydrodynamic simulation of strained nanoscale VLSI device
(2006)
Lo, Shih-Ching
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Yu, Shao-Ming
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資訊工程學系
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Department of Computer Science
Strained silicon field effect transistor (FET) has been known for enhancing carrier mobility. The stained Si channel thickness, the Si1-xGex composition fraction and the Si1-xGex layer thickness are three crucial parameters for designing strained Si/SiGe MOSFET. Mobility enhancement and device reliability may be unnecessarily conservative. In this paper, numerical investigation of drain current, gate leakage and threshold voltage for strained Si/SiGe MOSFET are simulated under different device profiles. According to our results, the optimal combination of parameters are as follows: stained Si channel thickness is 7 nm, Ge content is 20%, and the Si1-xGex layer thickness should be chosen between 20 similar to 50 nm.
Analytical solution of nonlinear Poisson equation for symmetric double-gate metal-oxide-semiconductor field effect transistors
(2007-07-01)
Lo, Shih-Ching
;
Li, Yiming
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Yu, Shao-Ming
;
資訊工程學系
;
電信工程研究所
In this paper, an analytical solution of the Poisson equation for double-gate metal-semiconductor-oxide field effect transistor (MOSFET) is presented, where explicit surface potential is derived so that the whole solution is fully analytical. Based on approximations of potential distribution, our solution scheme successfully takes the effect of doping concentration in each region. It provides an accurate description for partially and fully depleted MOSFET devices in different regions of operation. Comparison with numerical data shows that the solution gives good approximations of potential for MOSFETs under different biases and geometry configurations. The solution can be applied to estimate classical and quantum electron density of nanoscale double-gate MOSFETs. (c) 2007 Elsevier Ltd. All rights reserved.
Efficiency assessment of road project delivery models
(2007)
Lo, Shih-Ching
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Chao, Yu
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管理科學系
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Department of Management Science
In this study, four road delivery project models are analyzed by data envelopment analysis. The four models are design-bid-build (DBB), design-build (DB), construction management (CM) and design-build-maintenance (DBM). According to the analysis, DBM is the most efficient model and CM has the best time-scheduled control. DB performs the best efficiency in construction. The results may provide public sectors to employ an adequate model so as to proceed with road construction project.
Parallel simulation of deep sub-micron double-gate metal-oxide-semiconductor field effect transistors
(2005)
Yu, Shao-Ming
;
Chou, Hung-Mu
;
Lo, Shih-Ching
;
資訊工程學系
;
Department of Computer Science
Drift-Diffusion Density Gradient model (DD-DG) is the most popular model for simulating carrier transport phenomena in sub-micron semiconductor device, especially in two- or three-dimensional space. In deep sub-micron regime, the width effects cannot be neglected while simulating, i.e., three-dimensional simulation must be considered. However, three-dimensional computing is time-consuming. Fortunately, the dilemma of time consuming or rough approximation can be overcame by advanced computing technique. In this paper, we employ a parallel direct solving method to simulate double-gate metal-oxide-semiconductor field effect transistors (DG-MOSFET). The computational benchmarks of the parallel simulation, parallel speedup, load balance, and efficiency are studied in this work. Parallel numerical simulation of semiconductor devices is shown to be an indispensable tool for fast characterization and optimal design of semiconductor devices.