Browsing by Author "Lo, Shih-Yi"

Now showing 1 - 2 of 2

Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In-Ga-ZnO Thin-Film Transistors
(2011-11-01)
Chen, Wei-Tsung
;
Lo, Shih-Yi
;
Kao, Shih-Chin
;
Zan, Hsiao-Wen
;
Tsai, Chuang-Chuang
This letter discusses the reason for the instability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under both positive and negative bias stresses. This instability is significantly influenced by the oxygen content in the bulk IGZO and the surrounding environment. The as-fabricated low-temperature devices can only endure a single polarized bias stress. An a-IGZO TFT that is stable toward both positive and negative bias stresses with large relaxation times of 95 x 10(4) and 371 x 10(4) s, respectively, is achieved by annealing and passivation.
Study on Oxygen-dependent Instability of Amorphous In-Ga-Zn-O TFT and Completely Stable Device under Both Positive and Negative Bias Stresses
(2010)
Chen, Wei-Tsung
;
Zan, Hsiao-Wen
;
Lo, Shih-Yi
;
Kao, Shih-Chin
;
Tsai, Chuang-Chuang
A complete experiment is conducted to verify the origin of stress-induced instability in an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). It is found that the oxygen ratio in an IGZO layer strongly influences the device stability under bias stress. For realizing an adequately stable device, post-annealing and passivation are performed in order.