Study on Oxygen-dependent Instability of Amorphous In-Ga-Zn-O TFT and Completely Stable Device under Both Positive and Negative Bias Stresses

Abstract

A complete experiment is conducted to verify the origin of stress-induced instability in an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). It is found that the oxygen ratio in an IGZO layer strongly influences the device stability under bias stress. For realizing an adequately stable device, post-annealing and passivation are performed in order.