標題: | Study on Oxygen-dependent Instability of Amorphous In-Ga-Zn-O TFT and Completely Stable Device under Both Positive and Negative Bias Stresses |
作者: | Chen, Wei-Tsung Zan, Hsiao-Wen Lo, Shih-Yi Kao, Shih-Chin Tsai, Chuang-Chuang Lin, Jian-Hong Fang, Chun-Hsiang Lee, Chung-Chun 光電工程學系 Department of Photonics |
公開日期: | 2010 |
摘要: | A complete experiment is conducted to verify the origin of stress-induced instability in an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). It is found that the oxygen ratio in an IGZO layer strongly influences the device stability under bias stress. For realizing an adequately stable device, post-annealing and passivation are performed in order. |
URI: | http://hdl.handle.net/11536/135576 |
ISSN: | 1883-2490 |
期刊: | IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 |
起始頁: | 763 |
結束頁: | 765 |
顯示於類別: | 會議論文 |