Study on Oxygen-dependent Instability of Amorphous In-Ga-Zn-O TFT and Completely Stable Device under Both Positive and Negative Bias Stresses

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, Wei-Tsung	en_US
dc.contributor.author	Zan, Hsiao-Wen	en_US
dc.contributor.author	Lo, Shih-Yi	en_US
dc.contributor.author	Kao, Shih-Chin	en_US
dc.contributor.author	Tsai, Chuang-Chuang	en_US
dc.contributor.author	Lin, Jian-Hong	en_US
dc.contributor.author	Fang, Chun-Hsiang	en_US
dc.contributor.author	Lee, Chung-Chun	en_US
dc.date.accessioned	2017-04-21T06:48:36Z	-
dc.date.available	2017-04-21T06:48:36Z	-
dc.date.issued	2010	en_US
dc.identifier.issn	1883-2490	en_US
dc.identifier.uri	http://hdl.handle.net/11536/135576	-
dc.description.abstract	A complete experiment is conducted to verify the origin of stress-induced instability in an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). It is found that the oxygen ratio in an IGZO layer strongly influences the device stability under bias stress. For realizing an adequately stable device, post-annealing and passivation are performed in order.	en_US
dc.language.iso	en_US	en_US
dc.title	Study on Oxygen-dependent Instability of Amorphous In-Ga-Zn-O TFT and Completely Stable Device under Both Positive and Negative Bias Stresses	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3	en_US
dc.citation.spage	763	en_US
dc.citation.epage	765	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000393718700200	en_US
dc.citation.woscount	0	en_US
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