標題: Study on Oxygen-dependent Instability of Amorphous In-Ga-Zn-O TFT and Completely Stable Device under Both Positive and Negative Bias Stresses
作者: Chen, Wei-Tsung
Zan, Hsiao-Wen
Lo, Shih-Yi
Kao, Shih-Chin
Tsai, Chuang-Chuang
Lin, Jian-Hong
Fang, Chun-Hsiang
Lee, Chung-Chun
光電工程學系
Department of Photonics
公開日期: 2010
摘要: A complete experiment is conducted to verify the origin of stress-induced instability in an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). It is found that the oxygen ratio in an IGZO layer strongly influences the device stability under bias stress. For realizing an adequately stable device, post-annealing and passivation are performed in order.
URI: http://hdl.handle.net/11536/135576
ISSN: 1883-2490
期刊: IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3
起始頁: 763
結束頁: 765
Appears in Collections:Conferences Paper