Study on Oxygen-dependent Instability of Amorphous In-Ga-Zn-O TFT and Completely Stable Device under Both Positive and Negative Bias Stresses
| dc.citation.epage | 765 | en_US |
| dc.citation.spage | 763 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Chen, Wei-Tsung | en_US |
| dc.contributor.author | Zan, Hsiao-Wen | en_US |
| dc.contributor.author | Lo, Shih-Yi | en_US |
| dc.contributor.author | Kao, Shih-Chin | en_US |
| dc.contributor.author | Tsai, Chuang-Chuang | en_US |
| dc.contributor.author | Lin, Jian-Hong | en_US |
| dc.contributor.author | Fang, Chun-Hsiang | en_US |
| dc.contributor.author | Lee, Chung-Chun | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2017-04-21T06:48:36Z | |
| dc.date.available | 2017-04-21T06:48:36Z | |
| dc.date.issued | 2010 | en_US |
| dc.description.abstract | A complete experiment is conducted to verify the origin of stress-induced instability in an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). It is found that the oxygen ratio in an IGZO layer strongly influences the device stability under bias stress. For realizing an adequately stable device, post-annealing and passivation are performed in order. | en_US |
| dc.identifier.issn | 1883-2490 | en_US |
| dc.identifier.journal | IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/135576 | |
| dc.identifier.wosnumber | WOS:000393718700200 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Study on Oxygen-dependent Instability of Amorphous In-Ga-Zn-O TFT and Completely Stable Device under Both Positive and Negative Bias Stresses | en_US |
| dc.type | Proceedings Paper | en_US |
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