Browsing by Author "Lo, Yi-Zen"

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A New Method for Accurate Extraction of Source Resistance and Effective Mobility in Nanoscale Multifinger nMOSFETs
(2015-09-01)
Guo, Jyh-Chyurn
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Lo, Yi-Zen
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電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A new method is is developed for accurate extraction of the effective mobility (mu(eff)) in the multifinger nMOSFETs with various poly-to-poly (PO-PO) spaces. The wide PO-PO space intends to increase the tensile stress from a contact etching stop layer (CESL) and yields higher mu(eff) in the nMOSFETs. However, the source resistance (RS) emerges as a critical parasitic element in the multifinger devices with a large finger number. The wide PO-PO space generally leads to the further increase of RS, which may offset mu(eff) improvement and degrade transconductance (gm). A two-end source line is proposed to reduce RS and the impact on gm. The complicated layout-dependent effects containing the CESL strain, RS, and 3-D fringing capacitances bring a crucial challenge to the mu(eff) extraction. In this paper, a distributed transmission line model is derived for a reliable determination of RS, which is a key to the realization of accurate extraction of mu(eff) and layout-dependent effects in multifinger devices.
The Impact of Layout Dependent Effects on Mobility and Flicker Noise in Nanoscale Multifinger nMOSFETs for RF and Analog Design
(2016)
Guo, Jyh-Chyurn
;
Lo, Yi-Zen
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Ou, Jyun-Rong
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電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The impact of layout dependent effects on multi-finger (MF) device parameters, such as transconductance (g(m)), effective mobility (mu(eff)), source resistance (R-S), and flicker noise was investigated in this paper to facilitate RF and analog optimization design. MF devices with wide poly-to-poly (PO-PO) space can achieve higher mu(eff) and two-end source line layout can effectively reduce R-S to improve g(m). However, the wide PO-PO space yielding higher mu(eff) cannot ensure lower flicker noise in nMOSFETs, which is dominated by number fluctuation model.