Browsing by Author "Lu, S. S."

Now showing 1 - 9 of 9

An energy-efficient tie-type architecture for stable and wavelength-tunable SOA-based fiber laser
(2012-10-01)
Yeh, C. H.
;
Chow, C. W.
;
Wu, Y. F.
;
Lu, S. S.
;
光電工程學系
A new and energy-efficient tie-type architecture for stable and wavelength-tunable semiconductor optical amplifier (SOA)-based fiber ring laser is proposed and experimentally investigated. Here, the tie-type laser configuration is constructed by two Sagnac fiber loops. The proposed laser also can extend the lasing wavelength to longer wavelength (L-band) even only the C-band SOA is used. The proposed tie-type architecture has > 5 dB higher output optical power at bias current of 80 mA when compared with the single ring SOA-based fiber laser. In this measurement, the output power, wavelength tuning range, side-mode suppression ratio (SMSR) and output stability of proposed fiber laser have also been analyzed and discussed. (C) 2012 Elsevier B.V. All rights reserved.
Broadband C-plus L-band CW wavelength-tunable fiber laser based on hybrid EDFA and SOA
(2013-08-01)
Yeh, C. H.
;
Chow, C. W.
;
Chen, J. H.
;
Chen, K. H.
;
Lu, S. S.
In this demonstration, we propose and experimentally investigate a widely C + L band wavelength-tunable fiber ring laser in continuous-wave (CW) tuning based on a hybrid semiconductor optical amplifier (SOA) and erbium-doped fiber amplifier (EDFA) in a serial scheme. When a hybrid first-stage SOA and second-stage EDFA is used inside ring cavity, the effectively amplification range can be extended from C-band to L-band. Here, the proposed laser features wide wavelength-tuning range, high output power, and high side-mode suppression ratio (SMSR). In addition, a tunable range over 91.5 nm (from 1518.5 to 1610.0 nm) has been achieved. (C) 2013 Elsevier Inc. All rights reserved.
Dual-reflected-structure erbium-doped fiber laser in single-longitudinal-mode for wavelength-tuning
(2012-05-01)
Yeh, C. H.
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Chow, C. W.
;
Sung, J. Y.
;
Lu, S. S.
;
Wu, Y. F.
In this work, we propose and demonstrate a dual-reflected-structure erbium-doped fiber (EDF) laser with a linear cavity using a passive saturable-absorbor-based (SAB) filter to achieve single-longitudinal-mode (SLM) lasing. Here, we can observe the wavelength tuning range between 1530.0 and 1562.0 nm with the output powers of -13.7 to -7.6 dBm and optical signal to noise ratios (OSNRs) of 35.4 and 47.9 dB/0.05 nm, respectively. Moreover, when the lasing wavelength is tuned to the longer wavelength gradually, the obtained output power and SNR increase. This is because the Er+ gain can be suppressed and moves to the longer wavelength via the proposed fiber laser structure. In addition, the output stability of the proposed laser has also been analyzed and studied.
L-Band Multi-Wavelength Fiber Laser Utilizing Reflective Semiconductor Optical Amplifier with a Linear Cavity
(2013)
Yeh, C. H.
;
Chow, C. W.
;
Lu, S. S.
;
Chen, J. H.
;
光電工程學系
We first demonstrate an L-band multi-wavelength source only using a C-band reflective semiconductor optical amplifier (RSOA) and a linear cavity formed by a fiber coupler, a polarization controller and a reflected fiber mirror.
Performance enhancement of the nMOSFET low-noise amplifier by package strain
(2007-01-01)
Hua, W. -C.
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Chang, H. -L.
;
Wang, T.
;
Lin, C. -Y
;
Lin, C. -P.
The package strain improves the noise figure (NF) of the low-noise amplifier (LNA). The maximum noise reduction is similar to 0.53 dB (13%) at the operating frequency of 2.4 GHz under the biaxial tensile strain of 0.037%. The NIT reduction of the strained LNA is mainly due to the enhanced transconductance and cutoff frequency of the individual nMOSFET device under the same strain and bias conditions.
Stable wavelength-tuning laser in single-frequency by optical-injected Fabry-Perot laser diode and RSOA for long fiber distance propagation
(2012-01-01)
Yeh, C. H.
;
Chow, C. W.
;
Wu, Y. F.
;
Lu, S. S.
;
Lin, Y. H.
In this demonstration, we propose and experimentally investigate a stable wavelength-tuning laser configuration by using self-seeded Fabry-Perot laser diode (FP-LD) and external-injected reflective semi-conductor optical amplifier (RSOA). Here, this proposed laser can be tuned in the wavelength range of 1534.05 to 1553.00 nm with a 1.1 nm tuning-step. And the output powers and side-mode suppression ratios (SMSRs) are measured at -5.3 to 4.6 dBm and 31.2 to 50.1 dB/0.05 nm, respectively. And, the proposed laser also can be directly modulated at 2.5 Gb/s on-off keying (OOK) modulation format and propagates 75 km single-mode fiber (SMF) with no optical amplifier and dispersion compensation.
Ultra-broadband amplified spontaneous emission source by using heterogeneous optical amplifier
(2012-11-01)
Yeh, C. H.
;
Chow, C. W.
;
Chen, J. H.
;
Lu, S. S.
;
光電工程學系
In this work, we propose and experimentally investigate an ultra-broadband amplified spontaneous emission (ASE) light source with 113.8 nm bandwidth (1446.2 to 1560.0 nm) by using a cascaded two-stage optical amplifier, which is consisted of semiconductor optical amplifier (SOA, 1st stage) and erbiumdoped fiber amplifier (EDFA, 2nd stage), when the output intensity is above -35 dBm/0.01 nm. And, the EDFA only uses a 3 m long erbium-doped fiber (EDF) with a 27 mW pumping power and SOA is driven at 200 mA bias current. Moreover, the proposed amplifier also can provide a broadband gain amplification of 114 nm in the wavelengths of 1464.0 and 1578.0 nm with the noise figure distribution of 6.8 to 8.1 dB.
Using a C-band reflective semiconductor optical amplifier and linear cavity laser scheme for L-band multi-wavelength lasing
(2013-04-01)
Yeh, C. H.
;
Chow, C. W.
;
Lu, S. S.
;
光電工程學系
;
Department of Photonics
In this demonstration, we first propose and experimentally investigate an L-band multi-wavelength source only using a C-band reflective semiconductor optical amplifier (RSOA) and a linear cavity formed by a fiber coupler, a polarization controller and a reflected fiber mirror. According to the proposed laser structure, two to seven wavelengths can be generated simultaneously in the L-band when the RSOA is operated at different bias currents. Moreover, the stability performances of output power and lasing wavelength are also discussed.
Using Saganc loop of optical-injected semiconductor laser scheme for stable and continuous CW wavelength-tuning
(2012-01-01)
Yeh, C. H.
;
Chow, C. W.
;
Lu, S. S.
;
Wu, Y. F.
;
光電工程學系
We propose and experimentally investigate a stable and continuous wavelength-tuning laser structure by using self-injected Fabry-Perot laser diode (FP-LD) with Saganc loop scheme. In this proposed laser scheme, the lasing wavelength can be tuned in the range of 1526.20 to 1549.75 nm with tuning-step of 1.30 nm in single-longitudinal-mode (SLM) output. Here, the maximum and minimum output powers are -7.4 and -17.0 dBm, and their corresponding side-mode suppression ratios are 52.0 and 52.8 dB/0.05 nm, respectively. Moreover, to achieve the continuous wavelength tuning, we can also adjust the temperature of FP-LD for wavelength shifting.