Browsing by Author "Lu, Tsung-Yi"

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Characterization of Enhanced Stress Memorization Technique on nMOSFETs by Multiple Strain-Gate Engineering
(2011-04-01)
Lu, Tsung-Yi
;
Chang, Tien-Shun
;
Huang, Shih-An
;
Chao, Tien-Sheng
;
電子物理學系
To extend a carrier mobility improvement by strain engineering in high-density and small-gate-space complementary metal-oxide-semiconductor (CMOS) circuits, we have proposed a new stress memorization technique (SMT) that uses a strain proximity free technique (SPFT) to demonstrate the mobility improvement through multiple strain-gate engineering. The electron mobility of n-channel metal-oxide-semiconductor (MOS) field-effect transistors with the SPFT exhibits a 14% increase over counterpart techniques. Compared with the conventional SMT, the SPFT avoids the limitation of the stressor volume for the performance improvement in high-density CMOS circuits. We also found that the preamorphous layer (PAL) gate structure in combination with the SPFT can improve the mobility further to 31% greater than standard devices. Moreover, an additional 30% mobility enhancement can be achieved by using a dynamic threshold-voltage MOS and combining the PAL gate structure with the SPFT, respectively. The gate-oxide reliability and the channel-hot-carrier reliability are also analyzed. Our results show a mobility improvement by the SPFT, a slightly increased gate leakage current, and degraded channel-hot-carrier reliability.
Fluorinated HfO2 Gate Dielectrics Engineering for CMOS by pre- and post-CF4 Plasma Passivation
(2008)
Wu, Woei-Chemg
;
Lai, Chao-Sung
;
Lee, Shih-Ching
;
Ma, Ming-Wen
;
Chao, Tien-Sheng
In this paper, we demonstrate TaN/Fluorinated HfO2 CMOS devices, focusing on symmetry and asymmetry fluorine incorporation at top or bottom HfO2 interfaces. 16% permittivity enhancement, 65% and 91% mobility increases for electron and hole, respectively, under high electric field was achieved. Reliability of n- and p-MOSFET was improved 3 orders and 8% for GIDL and hot carrier immunity, respectively. A physical model of shallow and deep trapping level affected by fluorine was proposed to explain the NBTI and PBTI improvements.