Browsing by Author "Mondal, Somnath"

Now showing 1 - 4 of 4

Al-SiO2-Y2O3-SiO2-poly-Si Thin-Film Transistor Nonvolatile Memory Incorporating a Y2O3 Charge Trapping Layer
(2013)
Pan, Tung-Ming
;
Yen, Li-Chen
;
Mondal, Somnath
;
Lo, Chieh-Ting
;
Chao, Tien-Sheng
In this letter, we investigate the structural properties and electrical characteristics of the Al-SiO2-Y2O3-SiO2-poly-Si (AOYOP) thin-film transistor (TFT) nonvolatile memory device. The composition of Y2O3 charge-trapping layer was analyzed using X-ray photoelectron spectroscopy. The Y2O3 AOYOP TFT memory device exhibited a large memory window of 2.5 V, a long charge retention time of ten years with a minimal charge loss of similar to 15%, and a better endurance performance for P/E cycles up to 10(5). (c) 2013 The Electrochemical Society. All rights reserved.
Effect of Ti doping concentration on resistive switching behaviors of Yb2O3 memory cell
(2012-08-20)
Mondal, Somnath
;
Chen, Hung-Yu
;
Her, Jim-Long
;
Ko, Fu-Hsiang
;
Pan, Tung-Ming
We investigate the resistive memory switching behaviors of Yb2O3 thin films for different Ti-dopant concentrations. A higher doping concentration of 9.4% of Ti atom into Yb2O3 thin film causes the switching mechanism to change from bipolar to unipolar behavior. This is ascribed to different chemical compositions of the filament through the oxide film. The reset mechanism is associated with the annihilation of oxygen vacancies and other ionic and electronic defects within or near the interface area of oxide film for bipolar switching, while it is believed to be due to rupture of the conducting filament by local Joule heating effect for unipolar resistive switching. Furthermore, the incorporation of Ti atom into the Yb2O3 memory device exhibits improved electrical performances including low set/reset voltages and good endurance and retention characteristics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4747695]
Resistive Switching Characteristics of Tm2O3, Yb2O3, and Lu2O3-Based Metal-Insulator-Metal Memory Devices
(2012-09-01)
Pan, Tung-Ming
;
Lu, Chih-Hung
;
Mondal, Somnath
;
Ko, Fu-Hsiang
;
生物科技學系
In this paper, we investigated the electroforming-free resistive switching (RS) behavior in the Ru/RE2O3/TaN (rare-earth, RE, RE = Tm, Yb, and Lu) memory device fabricated with full room temperature process. The conduction mechanism of RE2O3 - based memory devices in the low-resistance state is ohmic emission, whereas Tm2O3, Yb2O3, and Lu2O3 memory devices in the high-resistance state are space charge limited conduction (SCLC), ohmic behavior, and SCLC, respectively. The Ru/Lu2O3/TaN device showed a high-resistance ratio of similar to 10(4), a high device yield of similar to 70%, a good data retention as long as 10(5) s measured at 85 degrees C, and a reliable endurance for up to 100 cycles, suggesting the optimal chemical defects (metallic Lu and nonlattice oxygen ion) in Lu2O3 film. All of these results suggest that Ru/Lu2O3/TaN structure memory is a good candidate for future nonvolatile RS memory applications.
The Effect of Al and Ni Top Electrodes in Resistive Switching Behaviors of Yb2O3-Based Memory Cells
(2012)
Mondal, Somnath
;
Her, Jim-Long
;
Ko, Fu-Hsiang
;
Pan, Tung-Ming
;
生物科技學系
In this letter, the effect of Al and Ni top electrodes in resistive switching behavior of Al/Yb2O3/TaN and Ni/Yb2O3/TaN memory devices is proposed. The Al/Yb2O3/TaN memory device demonstrates no such switching performance as applying bias on both top and bottom electrodes, whereas the Ni/Yb2O3/TaN reveals the bipolar memory switching behavior with a high resistance ratio of 10(4) for over 200 cycles of switching responses and good data retention with memory window of about 10(5) at 85 degrees C, as extrapolated up to 10 years. The resistance switching dynamic is ascribed to the conductivity modulation by oxygen ions/vacancies controlled electrochemical reaction process in the Yb2O3 switching layer. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.005202ssl] All rights reserved.