Browsing by Author "Ou, Jyun-Rong"

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The Impact of Layout Dependent Effects on Mobility and Flicker Noise in Nanoscale Multifinger nMOSFETs for RF and Analog Design
(2016)
Guo, Jyh-Chyurn
;
Lo, Yi-Zen
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Ou, Jyun-Rong
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電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The impact of layout dependent effects on multi-finger (MF) device parameters, such as transconductance (g(m)), effective mobility (mu(eff)), source resistance (R-S), and flicker noise was investigated in this paper to facilitate RF and analog optimization design. MF devices with wide poly-to-poly (PO-PO) space can achieve higher mu(eff) and two-end source line layout can effectively reduce R-S to improve g(m). However, the wide PO-PO space yielding higher mu(eff) cannot ensure lower flicker noise in nMOSFETs, which is dominated by number fluctuation model.
The Impact of Layout Dependent Intrinsic Parasitic RLC on High Frequency Performance in 3T and 4T Multi-finger nMOSFETs
(2019-01-01)
Guo, Jyh-Chyurn
;
Ou, Jyun-Rong
;
Lin, Jinq-Min
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A new observation of significant differences in the high frequency device parameters and performance like f(T) and f(MAX) is identified from the comparison of 3-terminal (3T) and 4-terminal (4T) multi-finger (MF) nMOSFETs. Through an extensive characterization on the intrinsic Z- and Y-parameters, it is found that the major impact comes from the particular increase of intrinsic parasitic resistances and inductances at the source terminal, namely R-s,R-int and L-s,L-int in the 4T MF MOSFETs. The proposed analytical models as a function of key device parameters incorporating the influence of the intrinsic parasitic RLC through high frequencies can accurately predict f(T) and f(MAX) degradation in 4T MF nMOSFETs as well as the complicated layout dependent effects. The experimental results and analytical models can be useful to facilitate MF devices layout optimization for high frequency design and performance improvement.