Browsing by Author "Pai, SC"

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Fabrication of very high resistivity Si with low loss and cross talk
(2000-09-01)
Wu, YH
;
Chin, A
;
Shih, KH
;
Wu, CC
;
Liao, CP
We have used proton and As+ implantation to increase the resistivity of conventional Si (10 Omega-cm) and Si-on-quartz substrates, respectively. High resistivity of 1.6 M Omega-cm is measured that is close to intrinsic Si and semi-insulating GaAs, Very low loss and cross coupling of 6.3 dB/cm and -79 dB/cm (10 mu m gap) at 20 GHz are measured on these samples, respectively. The very high resistivity and improved rf performance are due to the extremely fast similar to 1 ps carrier lifetime stable even after a 400 degrees C annealing for 1 h, Little negative effect on gate oxide integrity is also observed as evidenced by the comparable stress-induced leakage current and charge-to-breakdown for 30 Angstrom oxides.
Rf loss and cross talk on extremely high resistivity (10K-1M Omega-cm) Si fabricated by ion implantation
(2000)
Wu, YH
;
Chin, A
;
Shih, KH
;
Wu, CC
;
Liao, CP
We have achieved 1.6M Omega -cm resistivity using ion implantation that has little negative effect on MOS devices. Extremely low loss and cross coupling of 6.3 and -79 dB/cm (10 mum gap) at 20GHz are measured with 1 mum Al, respectively, which is due to implant induced trap with similar to 1ps carrier lifetime and stable to 400 degreesC.