Browsing by Author "Pan, SC"

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An endurance evaluation method for flash EEPROM
(2004-05-01)
Zous, NK
;
Chen, YJ
;
Chin, CY
;
Tsai, WJ
;
Lu, TC
Trap generation is hard to estimate in a Flash cell due to a dynamic stress field during program and erase. In this paper, a linear correlation is found between the erase state V-T rollup, and cycling V-T window. With the knowledge of the time dependence of erase stress field based on Fowler-Nordheim (FN) tunneling, the V-T rollup during cycling is evaluated by incorporating field dependent oxide trap generation. The extracted Delta V-T degradation slope during constant FN stress can be applied quantitatively to predict the V-T window closure during Flash cell cycling.
Integrating software agents with multi-level metadata in support of heterogeneous product search
(2003-05-01)
Liu, DR
;
Pan, SC
;
資訊管理與財務金融系註：原資管所+財金所
;
Department of Information Management and Finance
As the Internet grows, more virtual stores are selling products on the Internet. With the explosive growth of product information, Customers are experiencing difficulties in searching for product information satisfying their needs. To conduct an integrated search, data translation will be a problem because virtual stores may use their own data format to store product information. The characteristics of product may also vary in different product categories. This work proposes an agent-oriented search system integrating with multilevel metadata to Support effective search for heterogeneous product information. The proposed system enables users to search product information based on the attributes of various Product categories. Moreover, the multi-level metadata is able to facilitate resource-discovery and format translation, and to flexibly model the definitions of diverse attributes for describing products in various product categories and data resources. With the multi-level metadata and the agent technology, an integrated search for heterogeneous product information located in various virtual stores can be performed effectively.
Integrating software agents with multi-level metadata in support of heterogeneous product search
(2003-05-01)
Liu, DR
;
Pan, SC
;
資訊管理與財務金融系註：原資管所+財金所
;
Department of Information Management and Finance
As the Internet grows, more virtual stores are selling products on the Internet. With the explosive growth of product information, Customers are experiencing difficulties in searching for product information satisfying their needs. To conduct an integrated search, data translation will be a problem because virtual stores may use their own data format to store product information. The characteristics of product may also vary in different product categories. This work proposes an agent-oriented search system integrating with multilevel metadata to Support effective search for heterogeneous product information. The proposed system enables users to search product information based on the attributes of various Product categories. Moreover, the multi-level metadata is able to facilitate resource-discovery and format translation, and to flexibly model the definitions of diverse attributes for describing products in various product categories and data resources. With the multi-level metadata and the agent technology, an integrated search for heterogeneous product information located in various virtual stores can be performed effectively.
Positive oxide charge-enhanced read disturb in a localized trapping storage flash memory cell
(2004-03-01)
Tsai, WJ
;
Yeh, CC
;
Zous, NK
;
Liu, CC
;
Cho, SK
Read disturb-induced erase-state threshold voltage instability in a localized trapping storage Flash memory cell with a poly-silicon-oxide-nitride-oxide-silicon (SONOS) structure is investigated and reported. Our results show that positive trapped charge in bottom oxide generated during program/erase (P/E) cycles play a major role. Both gate voltage and drain voltage will accelerate the threshold voltage (V-t) drift. Hot-carrier caused disturb effect is more severe in a shorter gate length device at low temperature. A model of positive charge-assisted electron tunneling into a trapping nitride is proposed. Influence of channel doping on the V-t drift is studied. As the cell is in an "unbiased" storage mode, tunnel detrapping of positive oxide charges is responsible for the threshold voltage shift, which is insensitive to temperature.