Browsing by Author "S.C.Wang"

Now showing 1 - 3 of 3

Investigation of He-Ne Lasers
(交大學刊編輯委員會, 1966-04)
溫鼎勳
;
王興宗
;
T.S.Wen
;
S.C.Wang
To facilitate laser research at Chiao Tung, a laser plasma tube fabrication process using simple equipment has been developed. Consequently, tubes containing mixtures of He and Ne gases were made of different diameters and lengths, and their operation properties investigated. In this paper, the fabrication process is described and some characteristics of He-Ne gas lasers pertaining to the relations between output power and reflectig mirrors,exciting current,etc.,are presented.
Investigation on Characteristics of 6328Å He-Ne Gas Laser
(交大學刊編輯委員會, 1967-04)
王興宗
;
王喜雄
;
S.C.Wang
;
S.S.Wang
The properties of He-Ne gas laser has been investigated by many workers in this field. Yet due to the complicated dependence of characteristics especially of output power on tube parameters, no simple theory exists which could predict the detail of it. Hence more experimental investigations are required in order to reveal the output power characteristics of He-Ne gas laser. The purpose of this investigation is to observe the output power characteristics of He-Ne gas laser at 6328 Å wavelenth, the result would help to obtain the optimum power output for a given tube as well as optimum operation condition. The dependence of output power on excitation power is investigated first. This yields a different result from previous observation for a different laser tube. The variation of output power as well as radiation mode against the iris diameter is obtained by insertion of iris into resonator cavity. Besides, some investigationof polarization of laser beam by using polarizer variations of output power by applying different mode pattern are also made Finally the fluctuation of output power due to thermal effect is also presented.
質子佈植應用於長波長1.3.mu.mVCSEL之研製
(2003)
王興宗
;
S.C.Wang
;
國立交通大學光電工程研究所
近年來，氮摻雜之砷化鎵銦(N-InGaAs)已經成為一個熱門的研究材料，尤其是應用在長波長面射型雷射(VCSEL)元件上。因為N-InGaAs材料與砷化鎵(GaAs)半導體材料的晶格常數匹配，故可以在砷化鎵基板上配合AlGaAs/GaAs 之高反射鏡面直接磊晶出光電特性佳、製程簡單及低成本的長波長面射型雷射。由於長波長面射型雷射的發散角小、波長可調、低臨界電流、操作頻率快、整合性高及製作成本低，將成為下一代光電通訊系統主要的訊號源。本計畫，擬開發出質子佈植型長波長面射型雷射。