Browsing by Author "SHY, SL"

Now showing 1 - 4 of 4

0.35-MU-M PATTERN FABRICATION USING QUARTZ-ETCH ATTENUATE PHASE-SHIFTING MASK IN AN I-LINE STEPPER WITH A 0.50-NA AND A 0.60-SIGMA
(1995-02-01)
LOONG, WA
;
SHY, SL
;
LIN, YC
;
交大名義發表
;
應用化學系
A new method, namely, top critical dimension exposure-defocus tree (TCD E-D Tree), has been developed in this paper and used to analyze simulation results for quartz-etch attenuated phase-shifting mask (APSM). Simulation studies using Depict-3 (from TMA) on isolated and dense patterns indicate that numerical aperture (NA) 0.5 has greater depth of focus (DOF); NA 0.6 has larger exposure latitude (EL); best degree of coherence (sigma, sigma) value is between 0.6 approximately 0.7; best intensity transmittance (IT) range is 4 approximately 6%; the effect of mask bias on DOF and EL is rather small. The effect of sigma on space patterns including contact holes shows an inverse trend compared with lines. While conventional binary intensity mask (BIM) shows a 0.9 mum total DOF for dense line; APSM in our study (zero mask bias, 4% IT, 0.5 NA, 0.6 sigma) shows a 1.2 mum total DOF (30% improvement). The experimental results are highly in agreement with simulation. However, APSM shows only an insignificant improvement for EL in this study. Stepper with a NA of 0.5 and a sigma of 0.6 is very suitable for line, space and dense line/space pattern transfer using APSM in this study.
CROSS SHAPED PATTERN ON CHROME MASK FOR 0.5 MU-M CONTACT HOLE FABRICATION
(1994-01-01)
LOONG, WA
;
SHY, SL
;
GUO, GC
;
YANG, MT
;
SU, SY
This paper presents a cross shaped pattern on a chrome mask for the fabrication of 0.5 mu m contact hole. Based on simulation, in comparison to the conventional 0.5 mu m square mask, the contrast of aerial image of this mask gained 1.41 % at no defocus; 8.81 % at defocus 1.5 mu m. Exposure latitude gained 22.8 % under no defocus. From the experimental pattern transfer studies on positive tone photoresist using i-line 5X stepper, this mask has an useful focus range of -1.2 similar to +1.2 mu m while conventional has a range of -0.6 similar to +0.9 mu m. The drawback is that exposure dose needed is 1.2 similar to 1.5 times higher than conventional mask in our study.
SIMULATION AND FABRICATION OF A NEW PHASE-SHIFTING MASK FOR 0.35 MU-M CONTACT HOLE PATTERN TRANSFER - HALF-TONE-RIM
(1994)
LOONG, WA
;
SHY, SL
;
GUO, GC
;
CHOU, YL
;
應用化學系
SIMULATION STUDY OF A NEW PHASE-SHIFTING MASK - HALFTONE-RIM
(1995)
LOONG, WA
;
YEH, CH
;
SHY, SL
;
應用化學系
;
Department of Applied Chemistry