Browsing by Author "SU, JS"

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A NEW PROFILING TECHNIQUE FOR CHARACTERIZING HOT-CARRIER-INDUCED OXIDE DAMAGES IN LDD-N-MOSFETS
(1995-06-01)
LEE, GH
;
SU, JS
;
CHUNG, SS
;
交大名義發表
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電子工程學系及電子研究所
Previous studies showed that simultaneous determination of the interface states (N-it) and oxide-trapped charges (Q(ox)) in the vicinity of drain side of MOS devices are rather difficult. A new technique which allows the simultaneous characterization of the spatial distributions of both N-it and Q(ox) will be presented. Submicron LDD n-MOS devices were tested and charge pumping (CP) measurements were performed. The spatial distributions of both N-it and Q(ox) have been justified by 2-D device simulation results. Results show that simulated drain current characteristics compare well with experimental data. Moreover, results show that fixed-oxide charge effect is less pronounced to the device degradation in LDD n-MOS devices.
Accurate MOS device hot carrier models for VLSI reliability simulation
(1995)
CHUNG, SS
;
YANG, JJ
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SU, JS
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
MOTION RESTORATION - A METHOD FOR OBJECT AND GLOBAL MOTION ESTIMATION
(1994)
SU, JS
;
HANG, HM
;
LIN, DW
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics