Browsing by Author "Shieh Han-Ping"

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A design of liquid crystal lens with low voltage driving
(2013-08-01)
Tang Xian-Zhu
;
Chung Te-Chen
;
Jen T'ing-Hsien
;
Lu Jian-Gang
;
Shieh Han-Ping
Design rules for liquid crystal (LC) lens with low driving voltage are studied in this paper. Many rules are obtained from simulations of five kinds of LC materials. If normalized Delta n(eff) of the LC material is less than 95%, the driving voltage of LC lens will be less than 10 V. On the premise that the performance of LC lens is satisfied and fabrication process is permitted, the smaller the normalized Aneff, the lower the driving voltage of the designed LC lensis. The results in can guide people in this paper designing and preparing the LC lens with high performance.
A design of liquid crystal lens with low voltage driving
(2013-08-01)
Tang Xian-Zhu
;
Chung Te-Chen
;
Jen T'ing-Hsien
;
Lu Jian-Gang
;
Shieh Han-Ping
Design rules for liquid crystal (LC) lens with low driving voltage are studied in this paper. Many rules are obtained from simulations of five kinds of LC materials. If normalized Delta n(eff) of the LC material is less than 95%, the driving voltage of LC lens will be less than 10 V. On the premise that the performance of LC lens is satisfied and fabrication process is permitted, the smaller the normalized Aneff, the lower the driving voltage of the designed LC lensis. The results in can guide people in this paper designing and preparing the LC lens with high performance.
A measurement method of cell gap for liquid crystal lens
(2013)
Tang Xian-Zhu
;
Chung Te-Chen
;
Jen Ting-Hsien
;
Lu Jian-Gang
;
Shieh Han-Ping
There was a problem in current cell gap measurement of liquid crystal (LC) lens. A method was proposed by adopting interference of linearly polarized light in this paper. It was claimed that the incident light was monochromatic light with a uniform distribution of light intensity. The polarization axis of the analyzer was perpendicular or parallel to the polarization axis of polarizer. The difference between light and dark interference fringes was the biggest when the angle was equal to 45 degrees between the rubbing direction of alignment layer in the LC lens and the polarization axis of polarizer. The cell gap of LC lens can be calculated by the transmittance of LC lens center and the max transmittance of its other locations. The tilt angle was equal to the pre-tilt angle of LC at the LC lens center. This method was simple and reliable. Its accuracy is relatively high due to the use of optical interference principle.
High-Gain Complementary Inverter with Ambipolar Thin Film Transistors and Fabrication Thereof
(2012-11-29)
Liu Po-Tsun
;
Chou Yi-Teh
;
Teng Li-Feng
;
Fu Chur-Shyang
;
Shieh Han-Ping
The present invention relates to a high gain complementary inverter with ambipolar thin film transistors and fabrication thereof, comprising: a gate layer, a silica layer, a first active layer, a first source, a first drain, a second active layer, a second source and a second drain for fabrication cost and complexity reduction.
High-gain complementary inverter with ambipolar thin film transistors and fabrication thereof
(2013-10-22)
Liu Po-Tsun
;
Chou Yi-Teh
;
Teng Li-Feng
;
Fu Chur-Shyang
;
Shieh Han-Ping
The present invention relates to a high gain complementary inverter with ambipolar thin film transistors and fabrication thereof, comprising: a gate layer, a silica layer, a first active layer, a first source, a first drain, a second active layer, a second source and a second drain for fabrication cost and complexity reduction.
Influence of Double Channel Layers on the Performance of Nitrogen Doped Indium-zinc-oxide Thin Film Transistors
(2016-07-20)
Wang Nai-Qian
;
Zhang Qun
;
Shieh Han-Ping
;
光電工程學系
;
Department of Photonics
The nitrogen-doped amorphous indium-zinc-oxide thin film transistors with double channel layers (a-IZO/IZON-TFTs) were fabricated by RF magnetron sputtering of IZO target on the thermal oxidized p-type Si substrate. Influence of the double channel layers on the electrical performance and thermal stability of the devices were investigated. It is found that a-IZO/IZON-TFTs have high field effect mobility of 23.26 cm(2)/(V.s) and more positively shifted threshold voltage than that of a-IZO-TFTs. This is ascribed to the doped nitrogen which can help reduce oxygen vacancy in the channel layer, suppress carrier concentration and make the devices have a better threshold voltage. Meanwhile, employing a-IZO thin film can avoid the sharp drop of field effect mobility and drain on current caused by nitrogen doping on a-IZON layer, leading to promoting I-on/I-off ratio effectively. Besides, according to the transfer characteristics measured at temperatures from 298 K to 423 K, devices with a-IZO/IZON double layers have superior performance and thermal stability to TFTs of single channel layer, which can be ascribed to the protective effect of a-IZON thin film on the channel layers. The doped nitrogen can reduce the adsorption/desorption reaction of oxygen molecules on the back channel layer, leading to a significant improvement on thermal stability of the devices.