Browsing by Author "Shih, Che-Ju"

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First-principles Calculations on the Schottky Barrier Height of the NiGe/n-type Ge Contact with Dopant Segregation
(2014-01-01)
Lin, Han-Chi
;
Lin, Chiung-Yuan
;
Shih, Che-Ju
;
Tsui, Bing-Yue
;
電子工程學系及電子研究所
Effects of dopant segregation at the NiGe/Ge interface are analyzed theoretically and experimentally. First-principles calculations indicate that the physical Schottky barrier height would be reduced by the segregation of As by 0.081 eV. This small value is due to the Fermi-level pinning effect. Further improvement of the contact resistance may be achieved by reducing the interface states.