First-principles Calculations on the Schottky Barrier Height of the NiGe/n-type Ge Contact with Dopant Segregation

Abstract

Effects of dopant segregation at the NiGe/Ge interface are analyzed theoretically and experimentally. First-principles calculations indicate that the physical Schottky barrier height would be reduced by the segregation of As by 0.081 eV. This small value is due to the Fermi-level pinning effect. Further improvement of the contact resistance may be achieved by reducing the interface states.