Browsing by Author "Shih, Jian-Yu"

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A Novel Si-based X'tal Oscillator Device Using 3D Integration Technologies
(2014-01-01)
Shih, Jian-Yu
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Chen, Yen-Chi
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Chiu, Chih-Hung
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Lo, Chung-Lun
;
Chen, Kuan-Neng
A novel Si-based X\'tal oscillator device (1.2 mm x 1.0 mm) is demonstrated by using 3D integration technologies. It is distinct from conventional X\'tal oscillator device with ceramics and metal lid. The novel Si-based X\'tal oscillator device shows no leakage path, and passes the hermetic encapsulation test and reliability investigation. In addition, the novel device shows the excellent electrical characteristics and provides the possibility to replace the conventional fabrication approach for the next generation products.
Adhesion Investigation Between Metal and Benzocyclobutene (BCB) Polymer Dielectric Materials in 3-D Integration Applications
(2014-09-01)
Shih, Jian-Yu
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Huang, Wen-Chun
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Ko, Cheng-Ta
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Yang, Zheng
;
Hu, Sheng-Hsiang
In this paper, the interfacial adhesion strength between metal layer and benzocyclobutene (BCB) polymer dielectric in 3-D integration applications is investigated. The effects of layer thickness, layer stacking order, and additional adhesion layer of titanium (Ti) layer between copper (Cu) and BCB polymer are investigated. Surprisingly, the conventional titanium adhesion layer commonly used in the semiconductor industry weakens the interfacial adhesion strength between copper and BCB. Additionally, to figure out the interfacial adhesion mechanisms, the interfacial structures probed by sum-frequency-generation vibrational spectroscopy are correlated to the adhesion strengths measured from corresponding sample interfaces. It is found that ordered C-H groups at the metal/BCB interface, such as titanium/BCB or molybdenum/BCB, lead to weak interfacial adhesion strength, whereas disordered interfaces, i.e., copper/BCB, lead to strong interfacial adhesion strength.
Adhesion Property Between Cu, Ti Metal and SU-8, AZ 4620 Polymer Dielectric
(2016-07)
Huang, Yen-Jun
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Hsieh, Yen-Hui
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Shih, Jian-Yu
;
Chen, Han-Chun
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Leu, Jihperng
This study examines the metal/polymer interfacial adhesion strength for Cu, Ti and three polymers, BCB, SU-8 and AZ 4620. Detailed discussion and explanation focused on adhesion mechanism between metal and BCB, AZ 4620 dielectric are provided. The adhesion strengths of metal on polymer layer are measured by four point bending (FPB) test, which showed that copper and titanium have different characteristics in metal-polymer adhesion. Additionally, to figure out the interfacial adhesion mechanisms, X-ray photoelectron spectroscopy (XPS) technique is used to investigate the chemical bonding compositions between interfaces. The results indicate that the adhesion strength is enhanced by the intense reaction between metal and oxygen on the polymer main chain at the metal-polymer interfaces. On the other hand, interfacial adhesion strength is weaken owing to the destruction of polymer structure, thus the bonding between metal and polymer-main-chain debonded oxygen are of no effect on adhesion.
Advanced Crystal Component Package with Silicon TSV Interposer Using 3D Integration and Novel SU-8 Polymer Sealing Bonding Structure
(2014)
Shih, Jian-Yu
;
Chen, Yen-Chi
;
Lee, Shih-Wei
;
Hu, Yu-Chen
;
Chiu, Chih-Hung
In this paper, a novel crystal component package based on silicon TSV interposer substrate is demonstrated by using 3D integration technologies. It is distinct from conventional crystal component using ceramic-based substrate. This crystal component with advanced silicon-based substrate shows great manufacturability to replace traditional fabrication approach. In addition, the SU-8 sealing bonding structure provides the possibility to substitute for the conventional metal lid with reliability investigation. Finally, a novel silicon-based crystal component package with 3D integration is successfully fabricated through general semiconductor techniques to replace traditional manufacture.
Advanced TSV-Based Crystal Resonator Devices Using 3-D Integration Scheme With Hermetic Sealing
(2013-08-01)
Shih, Jian-Yu
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Chen, Yen-Chi
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Chiu, Chih-Hung
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Hu, Yu-Chen
;
Lo, Chung-Lun
An advanced crystal resonator device scheme using Cu through-silicon via (TSV), 3-D integration, and Si packaging technologies is successfully demonstrated. In addition to robust structural quality, the crystal resonator packaging has excellent electrical characteristics of low leakage current and reliability against harsh environment for MIL-STD-883 hermetic encapsulation. Using 3-D integration technologies and Si packaging, the proposed TSV-based crystal resonator device possesses the manufacturability potential while conventional ones using a metal lid or ceramic enclosure.
Device Characteristics of TSV-Based Piezoelectric Resonator With Load Capacitance and Static Capacitance Modification
(2015-03-01)
Shih, Jian-Yu
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Chen, Yen-Chi
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Chiu, Chih-Hung
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Lo, Chung-Lun
;
Chang, Chi-Chung
The piezoelectric resonator device based on 3-D integration technologies and hermetic sealing bonding is presented with conventional semiconductor process. To pursue small form factor, high-performance, and cost-effective technologies, this through-silicon via (TSV)-based resonator is fabricated by CuSn eutectic bonding for hermeticity, wafer-level thinning, and Cu TSVs interconnection, while high-temperature cofired ceramic (HTCC) with metal lid is applied in the conventional resonator devices. The device characteristics and reliability of TSV-based resonator reveal it has great performance and outstanding quality. In addition, the device characteristics with load capacitance and its improvement through modification of the isolation in TSV-based substrate are discussed in this research. Demonstrations of these characteristics show that the TSV-based resonator possesses advantages and compatibility with current semiconductor process, as well as the manufacturability compared with the conventional metal lid with HTCC enclosures.
Exploring the Correspondence Between Chemical States and Adhesion Property for Cr, Co Metal/AZ 4620, BCB Polymer Interface
(2018-02-01)
Hsieh, Yen-Hui
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Huang, Yen-Jun
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Shih, Jian-Yu
;
Leu, Jihperng
;
Chen, Kuan-Neng
A method is built for describing the relationship between adhesion strength and chemical states of Co/polymer and Cr/polymer interfaces. Based on the chemical bonding model, the adhesion strength is confirmed to be dominated by the metal organic complex at the interfaces. For Cr/polymers interfaces, the formation of metal-organic complex is restricted by the oxidation of metal atoms during deposition, which leads to almost no variation in adhesion from low [benzocyclobutene(BCB)] to high (AZ 4620) oxygenated polymers. On the other hand, a strong adhesion is observed at the Co/BCB interface that arises from the metal-organic bonds associated with hydroxyl groups in the polymer. The method is expected to provide clear analysis to other metal-polymer interfaces for seeking proper combination in heterogeneous integration.
Motional Resistance Issue of TSV-Based Resonator Device and Its Improvement With a Concave Cu TSV Structural Design
(2014-08-01)
Shih, Jian-Yu
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Chen, Yen-Chi
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Chiu, Chih-Hung
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Chen, Kuan-Neng
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交大名義發表
Motional resistance of TSV-based resonator devices with 3D integration techniques is investigated at the operating oscillating mode. Even with well-developed TSV and device fabrication, the motional resistance issue of the TSV-based resonator device is found due to the poor connected Ag paste. The corresponding solution is demonstrated by a modified concave Cu TSVs structure. This modified concave Cu TSV design shows the excellent device characteristics and no visible gaps between the Cu TSVs and resonator devices to insure a good electrical connection.
Polymer TSV Fabrication Scheme with Its Electrical and Reliability Test Vehicle
(2014)
Lee, Shih-Wei
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Shih, Jian-Yu
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Chuang, Ching-Te
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Hwang, Wei
;
Chiou, Jin-Chern
In this research, a novel process scheme for polymer TSV fabrication is proposed to solve the difficulty of polymer liner formation in TSV technology. The corresponding structure shows great manufacturability to replace traditional fabrication approach. In addition, Kelvin structure of the daisy chain is designed for evaluating electrical performance and reliability. Moreover, daisy chain with dummy TSV is designed to verify the impact of TSV pitch on TSV fabrication by using electrical measurement. The reliability tests include thermal cycling and humidity test to verify the quality of proposed polymer TSV design. Finally, a void-free polymer TSV with uniform liner formation is successfully fabricated and demonstrated.
Polymer-Based Liner TSV Fabrication Scheme and Its Resistance Variation
(2017-07-01)
Lee, Shih-Wei
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Shih, Jian-Yu
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Chen, Kuo-Hua
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Chiu, Chi-Tsung
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Chen, Kuan-Neng
In this paper, a process scheme for polymer TSV fabrication is proposed to solve the difficulty of polymer liner formation in TSV technology. By using ring trench etching and BCB deposition in a vacuum environment, uniform BCB liner can be successfully fabricated. Electrical measurement by using Kelvin structure is completed to ensure the performance of fabrication. However, a new phenomenon causing tiny resistance changes with the arrangement of TSV is discovered during the measurement of TSV chain. In this research, this effect is discussed in detail by designing different design of experiment (DOE) to pursue good electrical connection and reduce the variance of delay property of each TSV. Based on statistical results, impacts of TSV manufacturing process variance are discussed and the guideline in high density TSV design is found.
Quartz resonator assembling with TSV interposer using polymer sealing or metal bonding
(2014-10-01)
Shih, Jian-Yu
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Chen, Yen-Chi
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Chiu, Chih-Hung
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Lo, Chung-Lun
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Chang, Chi-Chung
This paper presents one wafer level packaging approach of quartz resonator based on through-silicon via (TSV) interposer with metal or polymer bonding sealing of frequency components. The proposed silicon-based package of quartz resonator adopts several three-dimensional (3D) core technologies, such as Cu TSVs, sealing bonding, and wafer thinning. It is different from conventional quartz resonator using ceramic-based package. With evaluation of mechanical structure design and package performances, this quartz resonator with advanced silicon-based package shows great manufacturability and excellent performance to replace traditional metal lid with ceramic-based interposer fabrication approach.
TSV-Based Quartz Crystal Resonator Using 3D Integration and Si Packaging Technologies
(2013)
Shih, Jian-Yu
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Chen, Yen-Chi
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Chiang, Cheng-Hao
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Chiu, Chih-Hung
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Hu, Yu-Chen
In this paper, one novel packaging approach for crystal resonator with the quartz crystal is demonstrated, developed and characterized. The proposed crystal resonator of the novel package adopts several 3-D core technologies, such as Cu TSVs, thin-film Cu/Sn eutectic bonding, and wafer thinning. A 1210 crystal resonator with quartz blank mount is successfully developed with Cu TSVs that enables the electrical connection of the signal electrode on the quartz blank. The quartz blank is protected by the simultaneous formation of strength reinforcement and excellent sealing capacity of thin-film Cu/Sn eutectic bonding. With the well fabrication and the enhanced structure, excellent leakage results in the MIL-STD-883 hermetic test (8.5*10(-9) similar to 1*10(-8) Pa m(3)/sec by He leak detector) show the crystal resonator using 3D integration has the great performance and manufacturability to replace the conventional metal or ceramic enclosures for the next generation products.
Wafer-level three-dimensional integrated circuits (3D IC): Schemes and key technologies
(2011-11-01)
Lai, Ming-Fang
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Li, Shih-Wei
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Shih, Jian-Yu
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Chen, Kuan-Neng
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電子工程學系及電子研究所
Schemes and key technologies of wafer-level three-dimensional integrated circuits (3D IC) are reviewed and introduced in this paper. Direction of wafer stacking, methods of wafer bonding, fabrication of through-silicon via (TSV), and classification of wafer type are options for 3D IC schemes. Key technologies, such as alignment. Cu bonding, and TSV fabrication, are described as well. Better performance, lower cost, and more functionality of future electronic products become feasible with 3D IC concept application. (C) 2011 Elsevier B.V. All rights reserved.