Browsing by Author "Shih, KH"

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Fabrication of very high resistivity Si with low loss and cross talk
(2000-09-01)
Wu, YH
;
Chin, A
;
Shih, KH
;
Wu, CC
;
Liao, CP
We have used proton and As+ implantation to increase the resistivity of conventional Si (10 Omega-cm) and Si-on-quartz substrates, respectively. High resistivity of 1.6 M Omega-cm is measured that is close to intrinsic Si and semi-insulating GaAs, Very low loss and cross coupling of 6.3 dB/cm and -79 dB/cm (10 mu m gap) at 20 GHz are measured on these samples, respectively. The very high resistivity and improved rf performance are due to the extremely fast similar to 1 ps carrier lifetime stable even after a 400 degrees C annealing for 1 h, Little negative effect on gate oxide integrity is also observed as evidenced by the comparable stress-induced leakage current and charge-to-breakdown for 30 Angstrom oxides.
Poly-Si thin-film transistors crystallized by electron-beam annealing
(2002-07-01)
Lin, CY
;
Shih, KH
;
Wu, CC
;
Chin, A
;
電子工程學系及電子研究所
We have investigated an alternative electron-beam crystallization method for poly-Si thin-film transistor application. In contrast to the high crystallization temperature and long duration of conventional furnace crystallization, electron-beam crystallization could be performed at a low thermal budget even without substrate heating. It also provides better device characteristics than conventional furnace annealing, including smaller threshold voltage, higher mobility, smaller subthreshold swing, and larger I-ON/I-OFF ratio. The much smoother surface than the excimer laser annealed sample is also important for further gate oxide integrity and device performance improvement. (C) 2002 The Electrochemical Society.
Rf loss and cross talk on extremely high resistivity (10K-1M Omega-cm) Si fabricated by ion implantation
(2000)
Wu, YH
;
Chin, A
;
Shih, KH
;
Wu, CC
;
Liao, CP
We have achieved 1.6M Omega -cm resistivity using ion implantation that has little negative effect on MOS devices. Extremely low loss and cross coupling of 6.3 and -79 dB/cm (10 mum gap) at 20GHz are measured with 1 mum Al, respectively, which is due to implant induced trap with similar to 1ps carrier lifetime and stable to 400 degreesC.