Browsing by Author "Shih, Tung-Chuan"

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GaSb/GaAs quantum dots and rings grown under periodical growth mode by using molecular beam epitaxy
(2015-09-01)
Chen, Hsuan-An
;
Shih, Tung-Chuan
;
Tang, Shiang-Feng
;
Weng, Ping-Kuo
;
Gau, Yau-Tang
GaSb/GaAs quantum dots (QDs) and quantum rings (QRs) are investigated. By using periodical growth interrupts, precise coverage control can be achieved for GaSb QD growth by using a single Ga source. With direct As irradiation to the substrate surface during the post soaking time, the soaking time can be effectively reduced while full ring morphologies and room-temperature QR luminescence can still be obtained by using this method. (C) 2015 Elsevier B.V. All rights reserved.
Long-Wavelength In-Plane Gate InAs Quantum-Dot Phototransistors
(2015-02-01)
Chen, Hsuan-An
;
Shih, Tung-Chuan
;
Lin, Shih-Yen
;
光電工程學系
;
Department of Photonics
In-plane gate transistors with and without an InAs quantum-dot (QD) absorption layer are investigated. The n-GaAs channel acts as both an absorption layer for incident light with energy higher than the GaAs bandgap and the transport path for the photocurrents. The insertion of InAs QD layer not only extends the absorption wavelength to 1.26 mu m, but also enhances the optical response from GaAs.