Browsing by Author "Su, P"

Now showing 1 - 8 of 8

An assessment of single-electron effects in multiple-gate SOI MOSFETs with 1.6-nm gate oxide near room temperature
(2006-03-01)
Lee, W
;
Su, P
;
Chen, HY
;
Chang, CY
;
Su, KW
This letter provides an assessment of single-electron effects in ultrashort multiple-gate silicon-on-insulator (SOI) MOSFETs with 1.6-nm gate oxide. Coulomb blockade oscillations have been observed at room temperature for gate bias as low as 0.2 V. The charging energy, which is about 17 meV for devices with 30-nm gate length, may be modulated by the gate geometry. The multiple-gate SOI MOSFET, with its main advantage in the suppression of short-channel effects for CMOS scaling, presents a very promising scheme to build room-temperature single-electron transistors with standard silicon nanoelectronics process.
Inversion MOS capacitance extraction for ultra-thin gate oxide using BSIM4
(2005)
Lee, W
;
Su, KW
;
Chiang, CS
;
Liu, S
;
Su, P
Modeling geometry-dependent floating-body effect using body-source built-in potential lowering for SOI circuit simulation
(2005-04-01)
Su, P
;
Lee, W
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This paper presents a compact silicon-on-insulator (SOI) model to capture the geometry-dependent floating-body effect using the body-source built-in potential lowering approach. This physically accurate model circumvents the modeling challenge imposed by the trend of the coexistence of partial-depletion (PD) and full-depletion (FD) devices in a single SOI chip by considering short-channel, reverse short-channel and reverse narrow-width floating-body effects. The implication on circuit simulation, under the unified Berkeley short-channel IGFET model-silicon-on-insulator (BSIMSOI) framework, has also been addressed. This geometry-dependent body-source built-in potential lowering model will further enhance the device design of scaled SOI complementary metal-oxide-semiconductor (CMOS) below 100 nm.
Modeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETs
(2004-06-01)
Chan, M
;
Su, P
;
Wan, H
;
Lin, CH
;
Fung, SKH
This paper describes a unified framework to model the floating-body effects of various SOI MOSFET operation modes, including body-contacted mode, partially depleted mode and fully depleted mode. As the operation mode is dimension and bias dependent, different modes can co-exist in a single SOI technology. A smooth transit from one type of operation mode to another is thus essential and has been included in the model. In addition, the floating-body effects can couple to a number of other SOI specific phenomena such as heating assisted impact ionization, gate tunneling induced dynamic behavior, and operation mode dependent small signal output resistance. A methodology to model the overall SOI MOSFET behavior due to the combination of multiple floating-body related effects will also be described. (C) 2004 Published by Elsevier Ltd.
Monte Carlo calculations of the reflection electron energy loss spectra in gold
(1997-01-07)
Kwei, CM
;
Su, P
;
Chen, YF
;
Tung, CJ
;
電子工程學系及電子研究所
The reflection electron energy loss spectra in gold have been calculated using a Monte Carte approach. A description of Monte Carlo simulations based on the dielectric response theory for inelastic volume and surface excitations and the partial wave expansion method for elastic scattering was presented. The influence of surface excitations on the angular and energy spectra of reflected electrons was analysed. These excitations contributed to the energy spectra by single and plural inelastic loss peaks and by the multiple inelastic loss background. Surface plasmons were particularly important for glancing incident or escape electrons. The contribution from surface excitations to the angular spectra was significant for energy losses of a few tenths of an electronvolt but less significant for lower and higher energy losses. The angular spectra revealed single elastic scattering peaks for zero energy loss but flatter multiple elastic scattering curves for large energy losses. In all cases, Monte Carlo simulation results, including surface excitations, agreed very well with experimental data.
Monte Carlo calculations of the reflection electron energy loss spectra in gold
(1997-01-07)
Kwei, CM
;
Su, P
;
Chen, YF
;
Tung, CJ
;
電子工程學系及電子研究所
The reflection electron energy loss spectra in gold have been calculated using a Monte Carte approach. A description of Monte Carlo simulations based on the dielectric response theory for inelastic volume and surface excitations and the partial wave expansion method for elastic scattering was presented. The influence of surface excitations on the angular and energy spectra of reflected electrons was analysed. These excitations contributed to the energy spectra by single and plural inelastic loss peaks and by the multiple inelastic loss background. Surface plasmons were particularly important for glancing incident or escape electrons. The contribution from surface excitations to the angular spectra was significant for energy losses of a few tenths of an electronvolt but less significant for lower and higher energy losses. The angular spectra revealed single elastic scattering peaks for zero energy loss but flatter multiple elastic scattering curves for large energy losses. In all cases, Monte Carlo simulation results, including surface excitations, agreed very well with experimental data.
On the prediction of geometry-dependent floating-body effect in SOI MOSFETs
(2005-07-01)
Su, P
;
Lee, W
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This brief demonstrates that, through the perspective of body-source built-in potential lowering (Delta V-bi), the geometry-dependent floating-body effect in state-of-the-art silicon-on-insulator (SOI) MOS-FETs can be explained and predicted by the geometry dependence of threshold voltage (V-T). The correlation between Delta V-bi and V-T unveiled in this brief is the underlying mechanism responsible for the coexistence of partially depleted and fully depleted devices in a single SOI chip.
Spatial distributions of elastically backscattered electrons from copper and silver
(1999-12-21)
Kwei, CM
;
Hung, CJ
;
Su, P
;
Tung, CJ
;
電子工程學系及電子研究所
We investigated the spatial distributions regarding the pathlength, the penetration depth, and the lateral displacement of 200-2000 eV electrons elastically backscattered from copper and silver We calculated these distributions by the Monte Carlo method using elastic scattering cross sections and inelastic inverse mean free paths for volume and surface excitations. in our approach, we applied the partial wave expansion method and the finite difference technique to calculate electron elastic cross sections by the Hartree-Fock-Winger-Seitz scattering potential for solid atoms. We employed the extended Drude dielectric function to estimate electron inelastic mean free paths inside the solid and electron surface excitation parameters outside the solid. Our study was focused on the energy dependence of the pathlength distribution, the maximum depth distribution and the radial distribution. We found that both the radial displacement and the maximum depth of backscattered electrons were on the order of a few angstroms. The maximum depth and the pathlength distributions obeyed the exponential attenuation form. The ratio of the attenuation lengths for the pathlength and the maximum depth distributions saturated to a value somewhat greater than two. Considering the back and forth trajectories of backscattered electrons, it revealed that mast electrons were backscattered from the solid through a single elastic scattering or a few elastic scatterings. As electron energy decreases, this ratio became larger, indicating that the probability for smaller scattering angles increases.