Browsing by Author "Sun, SC"

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A comparative study of CVD TiN and CVD TaN diffusion barriers for copper interconnection
(1995)
Sun, SC
;
Tsai, MH
;
Chiu, HT
;
Chuang, SH
;
Tsai, CE
Characterization and optimization of NO-nitrided gate oxide by RTP
(1995)
Sun, SC
;
Chen, CH
;
Yen, DLW
;
Lin, CJ
;
奈米中心
Comparison of the diffusion barrier properties of chemical-vapor-deposited TaN and sputtered TaN between Cu and Si
(1996-05-01)
Tsai, MH
;
Sun, SC
;
Tsai, CE
;
Chuang, SH
;
Chiu, HT
This work investigated the barrier properties of metalorganic chemical-vapor-deposited (CVD) tantalum nitride (TaN) and physical-vapor-deposited (PVD) TaN between Cu and Si. The CVD TaN film had a preferred orientation (200) with a grain size of around 60 nm, while the PVD TaN had a (111) preferred orientation with a grain size of around 20 nm, as determined by transmission electron microscopy (TEM) and x-ray diffraction (XRD) analyses. Degradation study of the Cu/TaN/Si contact system was also performed by sheet resistance measurement, scanning electron microscopy (SEM), XRD, secondary ion mass spectroscopy (SIMS), and shallow junction diodes. These results indicated that the PVD TaN film can act as a better diffusion barrier than the CVD TaN film. The higher thermal stability of PVD TaN than CVD TaN can be accounted by their difference in microstructures. The failure mechanisms of both CVD TaN and PVD TaN films as diffusion barriers between Cu and Si were also discussed. (C) 1996 American Institute of Physics.
Comparison of the diffusion barrier properties of chemical-vapor-deposited TaN and sputtered TaN between Cu and Si
(1996-05-01)
Tsai, MH
;
Sun, SC
;
Tsai, CE
;
Chuang, SH
;
Chiu, HT
This work investigated the barrier properties of metalorganic chemical-vapor-deposited (CVD) tantalum nitride (TaN) and physical-vapor-deposited (PVD) TaN between Cu and Si. The CVD TaN film had a preferred orientation (200) with a grain size of around 60 nm, while the PVD TaN had a (111) preferred orientation with a grain size of around 20 nm, as determined by transmission electron microscopy (TEM) and x-ray diffraction (XRD) analyses. Degradation study of the Cu/TaN/Si contact system was also performed by sheet resistance measurement, scanning electron microscopy (SEM), XRD, secondary ion mass spectroscopy (SIMS), and shallow junction diodes. These results indicated that the PVD TaN film can act as a better diffusion barrier than the CVD TaN film. The higher thermal stability of PVD TaN than CVD TaN can be accounted by their difference in microstructures. The failure mechanisms of both CVD TaN and PVD TaN films as diffusion barriers between Cu and Si were also discussed. (C) 1996 American Institute of Physics.
Effect of bottom electrode materials and annealing treatments on the electrical characteristics of Ba0.47Sr0.53TiO3 film capacitors
(1999-02-01)
Tsai, MS
;
Sun, SC
;
Tseng, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The dielectric constant and leakage current density of Ba0.47Sr0.53TiO3 (BST) thin films deposited by radiofrequency magnetron sputtering on various bottom electrode materials (Pt, Ir, IrO2/Ir, Ru, RuO2/Ru) before and after annealing in O-2 and N-2 ambient were investigated. Improvement in crystallinity of BST films deposited on various bottom electrodes was observed with annealing. The refractive index, dielectric constant, loss tangent, and leakage current of the films were also strongly dependent on annealing conditions. A BST thin film deposited on an Ir bottom electrode at 500 degrees C, after 700 degrees C annealing in O-2 for 20 min, had a dielectric constant of 593 +/- 5%, a loss tangent of 0.019 +/- 10% at 100 kHz, a leakage current of (2.1 +/- 13%) x 10(-8) A/cm(2) at an electric field of 100 kV/cm with a delay time of 30 s, and a charge storage density of 53 +/- 5% fC/mu m(2) at an applied field of 150 kV/cm. Based on the dielectric constant, leakage current, and reliability, the optimum material for the bottom electrode with annealing was Ir, Interdiffusion of Ru and Ti at the interface between the BST film and Ru electrode was observed in 500 degrees-700 degrees C annealed samples. The 10 year lifetime of time-dependent dielectric breakdown (TDDB) studies indicated that BST on Pt, Ir, IrO2/Ir, Ru, and RuO2/Ru had long lifetime over 10 years of operation at a voltage bias of 1 V.
Effect of bottom electrode materials on the electrical and reliability characteristics of (Ba, Sr)TiO3 capacitors
(1999-09-01)
Tsai, MS
;
Sun, SC
;
Tseng, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The dielectric constant and the leakage current density of (Ba, Sr)TiO3 (BST) thin films deposited on various bottom electrode materials (Pt, Ir. IrO2/Ir, Ru, RuO2/Ru) before and after annealing in O-2 ambient were investigated. The improvement of crystallinity of BST films deposited on various bottom electrodes was observed after the postannealing process, The dielectric constant and leakage current of the films were also strongly dependent on the postannealing conditions. BST thin film deposited on Ir bottom electrode at 500 degrees C, after 700 degrees C annealing in O-2 for 20 min, has the dielectric constant of 593, a loss tangent of 0.019 at 100 kHz, a leakage current density of 1.9 x 10(-8) A/cm(2) at an electric field of 200 kV/cm with a delay time of 30 s, and a charge storage density of 53 fC/mu m(2) at an applied field of 100 kV/cm, The BST films deposited on Ir with post-annealing can obtain better dielectric properties than on other bottom electrodes in our experiments, And Ru electrode is unstable because the interdiffusion of Ru and Ti occurs at the interface between the BST and Ru after postannealing. The ten-year lifetime of time-dependent dielectric breakdown (TDDB) studies indicate that BST on Pt, Ir, IrO2/Ir, Ru, and RuO2/Ru have long lifetimes over ten years on operation at the voltage bias of 2 V.
Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO3 thin films prepared by radio-frequency magnetron sputtering
(1997-10-01)
Tsai, MS
;
Sun, SC
;
Tseng, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Thin films of (Ba,Sr)TiO3 on Pt/SiO2/Si substrates were deposited using rf magnetron sputtering at various substrate temperatures and O-2/(Ar + O-2) mixing ratios (OMR). The crystallinity of the films improved significantly as the OMR increased. The dielectric constant increased with increasing OMR and reached a maximum value at 50% OMR. The leakage current density decreased with increasing oxygen flow, but had a minimum value at 40% OMR. The results for the dielectric constant and the leakage current were interpreted in terms of polarization effect and loss theory, The film deposited at 450 degrees C and 50% OMR exhibited good surface morphology add had a dielectric constant of 375, a tangent loss of 0.074 at 100 kHz, a leakage current density of 7.35 X 10(-9) A/cm(2) at an electric field of 100 kV/cm with a delay time of 30 s, and a charge storage density of 49 fC/mu m(2) at an applied field of 150 kV/cm. The 10 yr lifetime of time-dependent dielectric breakdown studies indicate that a 50% OMR sample has a longer lifetime than the 0% OMR sample. (C) 1997 American Institute of Physics.
Effect of rapid thermal annealing on the electrical and physical properties of metalorganic chemical-vapor-deposited TiN
(1996-01-29)
Sun, SC
;
Tsai, MH
;
奈米中心
;
Nano Facility Center
This work reports on the effect of postdeposition thermal treatment using rapid thermal annealing on the physical and electrical properties of metalorganic chemical-vapor-deposited (MOCVD) titanium nitride (TiN) thin films. When ammonia is used as the annealing ambient, the resistivity decreases with increasing annealing temperature. The resistivity of MOCVD TiN was reduced from 6000 to 320 mu Omega cm after 800 degrees C rapid thermal annealing in ammonia (RTN). Annealing in nitrogen ambient was found to be not nearly as effective as that in ammonia. The decrease in resistivity may be attributed to a reduction in the carbon and oxygen content, growth in grain size through polycrystalline recrystallization, as well as to an increase in film density. (C) 1995 American Institute of Physics.
Effects of electrode materials and annealing ambients on the electrical properties of TiO2 thin films by metalorganic chemical vapor deposition
(1997-03-01)
Sun, SC
;
Chen, TF
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
In this work, we investigate the effects of the top electrode materials and annealing ambients on the electrical properties of chemical-vapor-deposited (CVD) TiO2 films. Experimental results indicate that the leakage current is mainly determined by the work function of electrode materials before sintering. The capacitor with TaN top electrode reveals the least leakage. After 450 degrees C and 800 degrees C sintering in N-2, owing to its thermal stability, WN is found to be the optimal material for withstanding high-temperature thermal treatment. From the annealing ambient results, N2O was more effective than O-2 in reducing leakage current, and furnace annealing in N2O (FN2O) produces the smallest leakage. Such a phenomenon is primarily owing to the reduction of oxygen vacancies and carbon concentration in TiO2 by the atomic oxygen generated by the dissociation of N2O during the thermal cycle, thereby improving film quality.
Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films
(1998-01-01)
Tsai, MS
;
Sun, SC
;
Tseng, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The dielectric constant and the leakage current of (Ba,Sr)TiO3 (BST) thin films deposited on Pt bottom electrodes before and after annealing in O-2 and N-2 ambients were investigated. The crystallinity was improved after postdeposition annealing. The refractive index, dielectric constant, and leakage current of the films were strongly dependent on the annealing conditions. The O-2-annealed BST films have higher dielectric constant and lower leakage current than those annealed in N-2 ambient.
Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films
(1998-01-01)
Tsai, MS
;
Sun, SC
;
Tseng, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The dielectric constant and the leakage current of (Ba,Sr)TiO3 (BST) thin films deposited on Pt bottom electrodes before and after annealing in O-2 and N-2 ambients were investigated. The crystallinity was improved after postdeposition annealing. The refractive index, dielectric constant, and leakage current of the films were strongly dependent on the annealing conditions. The O-2-annealed BST films have higher dielectric constant and lower leakage current than those annealed in N-2 ambient.
Evaluation of PTFE nanoemulsion as a low dielectric constant material ILD
(1997)
Sun, SC
;
Chiang, YC
;
Rosenmayer, CT
;
Teguh, J
;
Wu, H
Polytetrafluoroethylene (PTFE) has been studied as a low dielectric constant material for ULSI. A novel nanoparticle dispersion of PTFE was developed that permits the spin-coat deposition of PTFE with a thickness range of 0.2 to 1.5 mu m. These PTFE nanoemulsions are aqueous emulsions containing sub-50 nm size PTFE particles and surfactant that are thermodynamically stable, optically clear, and have low viscosity and surface tension. The films cast from this nanoemulsion are uniform in thickness with a standard deviation of < 2%. From FTIR spectra, significant amounts of C-F bonds (1153 cm(-1) and 1211 cm(-1)) are detected in the films. The index of refraction from ellipsometry measurement is about 1.35 and the dielectric constant measured from high frequency C-V curves is about 1.85. The dielectric strength is about 170 V/mu m. TGA data indicates a weight loss rate of less than 0.25%/hr. at 425 degrees C. The moisture absorption is less than 0.01%. After sintering, the films are extremely resistant to chemical attack by sulfuric acid, buffered HF, and positive photoresist developer. The etch rate in an oxygen plasma at 30 W is around 200 nm/min. Stud pull tests indicate good adhesion to SiO2, Al, and Cu. Results of thermal, dielectric, chemical, and adhesion tests indicate that these PTFE films have potential for use as an integrated circuit dielectric material.
Gate oxynitride grown in N2O and annealed in no using rapid thermal processing
(1995)
Sun, SC
;
Chen, CH
;
Lou, JC
;
Yen, LW
;
Lin, CJ
Leakage current reduction in chemical-vapor-deposited Ta2O5 films by rapid thermal annealing in N2O
(1996-07-01)
Sun, SC
;
Chen, TF
;
電子工程學系及電子研究所
;
奈米中心
;
Department of Electronics Engineering and Institute of Electronics
This study aims to improve the electrical characteristics and reliability of low-pressure chemical vapor deposited (LPCVD) Ta2O5 films by developing a new postdeposition single-step annealing technique. Experimental results indicate that excited oxygen atoms generated by N2O decomposition can effectively repair the oxygen vacancies in the as-deposited CVD Ta2O5 film, thereby resulting in a remarkable reduction of the film's leakage current. Two other post-deposition annealing conditions are compared: rapid thermal O-2 annealing and furnace dry-O-2 annealing. The comparison reveals that RTN(2)O annealing has the lowest leakage current, superior thermal stability of electrical characteristics and the best time-dependent dielectric breakdown (TDDB) reliability.
Leakage current reduction in chemical-vapor-deposited Ta2O5 films by rapid thermal annealing in N2O
(1996-07-01)
Sun, SC
;
Chen, TF
;
電子工程學系及電子研究所
;
奈米中心
;
Department of Electronics Engineering and Institute of Electronics
This study aims to improve the electrical characteristics and reliability of low-pressure chemical vapor deposited (LPCVD) Ta2O5 films by developing a new postdeposition single-step annealing technique. Experimental results indicate that excited oxygen atoms generated by N2O decomposition can effectively repair the oxygen vacancies in the as-deposited CVD Ta2O5 film, thereby resulting in a remarkable reduction of the film's leakage current. Two other post-deposition annealing conditions are compared: rapid thermal O-2 annealing and furnace dry-O-2 annealing. The comparison reveals that RTN(2)O annealing has the lowest leakage current, superior thermal stability of electrical characteristics and the best time-dependent dielectric breakdown (TDDB) reliability.
Metal-organic chemical vapor deposition of tantalum nitride barrier layers for ULSI applications
(1995-12-01)
Tsai, MH
;
Sun, SC
;
Lee, CP
;
Chiu, HT
;
Tsai, CE
Low-resistivity tantalum nitride (TaN) films were deposited by low-pressure metal-organic chemical vapor deposition (MOCVD) using a new precursor tertbutylimidotrisdiethyl amidotantalum. The surface morphology and the step coverage of TaN films were characterized by scanning electron microscopy. The film deposited at 450 degrees C had nearly 100% step coverage and the step coverage decreased to 25% for the films deposited at 650 degrees C, The carbon and oxygen concentrations are about 10 at.% in the CVD TaN films, as determined by Auger electron spectroscopy. From Rutherford backscattering spectroscopy and secondary ion mass spectroscopy analysis, TaN films were found to be effective diffusion barriers between aluminum and silicon up to 550 degrees C. The electrical measurements of diode-leakage current indicate that the Al/TaN/Si structure remained stable up to 500 degrees C, after which Al started to diffuse through the TaN layer and resulted in a higher leakage current.
Metalorganic chemical vapor deposition of tungsten nitride for advanced metallization
(1996-03-04)
Tsai, MH
;
Sun, SC
;
Chiu, HT
;
Chuang, SH
;
電子工程學系及電子研究所
In this study, the physical and electrical properties of tungsten nitride thin films deposited by thermal decomposition of bis(tertbutylimido)bis(tertbutylamido)tungsten have been investigated. The films have an excellent step coverage over high aspect-ratio contact holes as well as a low carbon concentration. Strong W-N double bonds in the precursor preserved the nitrogen atoms during the pyrolysis process. This method subsequently yielded low-resistivity films. A decrease in film resistivity from 4300 to 620 mu Ohm cm corresponded to an increase in the deposition temperature from 500 to 650 degrees C, X-ray diffraction (XRD) and wavelength dispersive spectroscopy (WDS) results indicated that the as-deposited films have face centered cubic (fcc) phase polycrystalline structures with excessive nitrogen atoms. (C) 1996 American Institute of Physics.
MOS characteristics of N2O-grown and NO-annealed oxynitrides
(1995)
Sun, SC
;
Chen, CH
;
Lou, JC
;
奈米中心
;
Nano Facility Center
Performance of MOCVD tantalum nitride diffusion barrier for copper metallization
(1995)
Sun, SC
;
Tsai, MH
;
Tsai, CE
;
Chiu, HT
;
奈米中心
Properties of metalorganic chemical vapor deposited tantalum nitride thin films
(1995)
Sun, SC
;
Tsai, MH
;
Tsai, CE
;
Chiu, HT
;
奈米中心