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Browsing by Author "TAI, KC"

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    VISIBLE INGAP/LNGAAIP QUANTUM-WELL TOP SURFACE-EMITTING LASER-DIODES
    (1993-11-15)
    TAI, KC
    ;
    HUANG, KF
    ;
    WU, CC
    ;
    WYNN, JD
    ;
    電子物理學系
    Vertical cavity top surface emitting lasers emitting near 0.67 mu m visible spectral region were fabricated by one-step low pressure metalorganic vapor phase deposition technique. The lasers used four 80-Angstrom-thick InGaP/InGaAlP quantum wells active region, sandwiched between two Al0.5Ga0.5As/AlAs distributed Bragg reflectors. Room temperature pulsed threshold current was 10 mA for 15 mu m diam devices.