VISIBLE INGAP/LNGAAIP QUANTUM-WELL TOP SURFACE-EMITTING LASER-DIODES

Abstract

Vertical cavity top surface emitting lasers emitting near 0.67 mu m visible spectral region were fabricated by one-step low pressure metalorganic vapor phase deposition technique. The lasers used four 80-Angstrom-thick InGaP/InGaAlP quantum wells active region, sandwiched between two Al0.5Ga0.5As/AlAs distributed Bragg reflectors. Room temperature pulsed threshold current was 10 mA for 15 mu m diam devices.