VISIBLE INGAP/LNGAAIP QUANTUM-WELL TOP SURFACE-EMITTING LASER-DIODES
| dc.citation.epage | 2734 | en_US |
| dc.citation.issue | 20 | en_US |
| dc.citation.spage | 2732 | en_US |
| dc.citation.volume | 63 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | TAI, KC | en_US |
| dc.contributor.author | HUANG, KF | en_US |
| dc.contributor.author | WU, CC | en_US |
| dc.contributor.author | WYNN, JD | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:04:16Z | |
| dc.date.available | 2014-12-08T15:04:16Z | |
| dc.date.issued | 1993-11-15 | en_US |
| dc.description.abstract | Vertical cavity top surface emitting lasers emitting near 0.67 mu m visible spectral region were fabricated by one-step low pressure metalorganic vapor phase deposition technique. The lasers used four 80-Angstrom-thick InGaP/InGaAlP quantum wells active region, sandwiched between two Al0.5Ga0.5As/AlAs distributed Bragg reflectors. Room temperature pulsed threshold current was 10 mA for 15 mu m diam devices. | en_US |
| dc.identifier.doi | 10.1063/1.110343 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.110343 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2787 | |
| dc.identifier.wosnumber | WOS:A1993MG67400006 | |
| dc.language.iso | en_US | en_US |
| dc.title | VISIBLE INGAP/LNGAAIP QUANTUM-WELL TOP SURFACE-EMITTING LASER-DIODES | en_US |
| dc.type | Article | en_US |
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