標題: | VISIBLE INGAP/LNGAAIP QUANTUM-WELL TOP SURFACE-EMITTING LASER-DIODES |
作者: | TAI, KC HUANG, KF WU, CC WYNN, JD 電子物理學系 光電工程學系 Department of Electrophysics Department of Photonics |
公開日期: | 15-十一月-1993 |
摘要: | Vertical cavity top surface emitting lasers emitting near 0.67 mu m visible spectral region were fabricated by one-step low pressure metalorganic vapor phase deposition technique. The lasers used four 80-Angstrom-thick InGaP/InGaAlP quantum wells active region, sandwiched between two Al0.5Ga0.5As/AlAs distributed Bragg reflectors. Room temperature pulsed threshold current was 10 mA for 15 mu m diam devices. |
URI: | http://dx.doi.org/10.1063/1.110343 http://hdl.handle.net/11536/2787 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.110343 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 63 |
Issue: | 20 |
起始頁: | 2732 |
結束頁: | 2734 |
顯示於類別: | 期刊論文 |