VISIBLE INGAP/LNGAAIP QUANTUM-WELL TOP SURFACE-EMITTING LASER-DIODES

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	TAI, KC	en_US
dc.contributor.author	HUANG, KF	en_US
dc.contributor.author	WU, CC	en_US
dc.contributor.author	WYNN, JD	en_US
dc.date.accessioned	2014-12-08T15:04:16Z	-
dc.date.available	2014-12-08T15:04:16Z	-
dc.date.issued	1993-11-15	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.110343	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2787	-
dc.description.abstract	Vertical cavity top surface emitting lasers emitting near 0.67 mu m visible spectral region were fabricated by one-step low pressure metalorganic vapor phase deposition technique. The lasers used four 80-Angstrom-thick InGaP/InGaAlP quantum wells active region, sandwiched between two Al0.5Ga0.5As/AlAs distributed Bragg reflectors. Room temperature pulsed threshold current was 10 mA for 15 mu m diam devices.	en_US
dc.language.iso	en_US	en_US
dc.title	VISIBLE INGAP/LNGAAIP QUANTUM-WELL TOP SURFACE-EMITTING LASER-DIODES	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.110343	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	63	en_US
dc.citation.issue	20	en_US
dc.citation.spage	2732	en_US
dc.citation.epage	2734	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:A1993MG67400006	-
dc.citation.woscount	4	-
顯示於類別：	期刊論文