Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells

標題:	Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells
作者:	Shu, G. W. Lin, J. Y. Jian, H. T. Shen, J. L. Wang, S. C. Chou, C. L. Chou, W. C. Wu, C. H. Chiu, C. H. Kuo, H. C. 電子物理學系光電工程學系光電工程研究所 Department of Electrophysics Department of Photonics Institute of EO Enginerring
公開日期:	14-一月-2013
摘要:	Spatially-resolved electroluminescence (EL) images in the triple junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that in the middle subcell, the EL of the top subcell quenches. By analysis of EL intensity as a function of irradiation level, it is found that the coupled p-n junction structure and the photovoltaic effect are responsible for the observed EL quenching. With optical coupling and photoswitching effects in the multi-junction diode, a concept of infrared image sensors is proposed. (C)2012 Optical Society of America
URI:	http://dx.doi.org/10.1364/OE.21.00A123 http://hdl.handle.net/11536/21466
ISSN:	1094-4087
DOI:	10.1364/OE.21.00A123
期刊:	OPTICS EXPRESS
Volume:	21
Issue:	1
起始頁:	0
結束頁:	0
顯示於類別：	期刊論文

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