Browsing by Author "TSAI, JS"

Now showing 1 - 6 of 6

COUPLING MECHANISMS OF ACOUSTIC 2ND-HARMONIC GENERATION IN PIEZOELECTRIC SEMICONDUCTORS
(1987-04-10)
WU, CC
;
TSAI, JS
;
電控工程研究所
;
Institute of Electrical and Control Engineering
EFFECT OF ENERGY-BAND STRUCTURES ON THE PROPAGATION OF ULTRASOUND IN DEGENERATE SEMICONDUCTORS
(1982)
WU, CC
;
TSAI, JS
;
應用數學系
;
Department of Applied Mathematics
EFFECT OF NONPARABOLIC BAND-STRUCTURE ON AMPLIFICATION OF SURFACE PHONONS IN N-TYPE INSB FILMS
(1982)
WU, CC
;
TSAI, JS
;
應用數學系
;
Department of Applied Mathematics
EFFECT OF NONPARABOLICITY ON FREE-CARRIER ABSORPTION IN DEGENERATE N-TYPE INDIUM-ANTIMONIDE IN QUANTIZING MAGNETIC-FIELDS
(1992-01-01)
WU, CC
;
TSAI, JS
;
LIN, CJ
;
應用數學系
;
電控工程研究所
Free-carrier absorption in degenerate semiconductors such as n-type InSb has been investigated in quantizing magnetic fields at a very low temperature limit. It is assumed that the energy band of electrons in semiconductors is nonparabolic and the dominant scattering mechanism for electrons is the acoustic phonon scattering via the deformation potential coupling. Numerical results show that both real and imaginary parts of the absorption coefficient in degenerate semiconductors oscillate quite considerably with the magnetic field from the lower-field up to a higher-field region and some discontinuous points can be observed there. This is different from the numerical results shown in nondegenerate semiconductors.
EFFECT OF NONPARABOLICITY ON FREE-CARRIER ABSORPTION IN SEMICONDUCTORS AT QUANTIZING MAGNETIC-FIELDS
(1990-09-15)
WU, CC
;
TSAI, JS
;
LIN, CJ
;
應用數學系
;
電控工程研究所
NONLINEAR RESPONSE OF ELECTRON PHONON INTERACTION IN N-TYPE NONDEGENERATE PIEZOELECTRIC SEMICONDUCTORS
(1987-09-01)
WU, CC
;
TSAI, JS
;
電控工程研究所
;
Institute of Electrical and Control Engineering