Browsing by Author "Teng Li-Feng"

Now showing 1 - 4 of 4

High-Gain Complementary Inverter with Ambipolar Thin Film Transistors and Fabrication Thereof
(2012-11-29)
Liu Po-Tsun
;
Chou Yi-Teh
;
Teng Li-Feng
;
Fu Chur-Shyang
;
Shieh Han-Ping
The present invention relates to a high gain complementary inverter with ambipolar thin film transistors and fabrication thereof, comprising: a gate layer, a silica layer, a first active layer, a first source, a first drain, a second active layer, a second source and a second drain for fabrication cost and complexity reduction.
High-gain complementary inverter with ambipolar thin film transistors and fabrication thereof
(2013-10-22)
Liu Po-Tsun
;
Chou Yi-Teh
;
Teng Li-Feng
;
Fu Chur-Shyang
;
Shieh Han-Ping
The present invention relates to a high gain complementary inverter with ambipolar thin film transistors and fabrication thereof, comprising: a gate layer, a silica layer, a first active layer, a first source, a first drain, a second active layer, a second source and a second drain for fabrication cost and complexity reduction.
Method of manufacturing semiconductor device
(2015-03-10)
Liu Po-Tsun
;
Wang Wei-Ya
;
Teng Li-Feng
The present invention provides a method of manufacturing a semiconductor device. The method at least comprises the following steps. First, the semiconductor device, which comprises a gate, a gate dielectric layer, an active layer, a source and a drain, is manufactured. However, the semiconductor device has a plurality of defects, and the active layer is a metal oxide thin film. After annealing the semiconductor device, it will be transferred into a chamber. A final step of injecting a supercritical fluid carried with a co-solvent into the chamber is then performed to modify the abovementioned defects.
Thin film transistor with UV light absorber layer
(2015-03-03)
Shieh Han-Ping D.
;
Liu Po-Tsun
;
Tsai Yun-Chu
;
Tsai Min-Yen
;
Teng Li-Feng
A thin film transistor comprises a transparent substrate, a gate is disposed on the transparent substrate, a gate insulator is disposed on the gate and the transparent substrate, an active layer is disposed on the gate insulator, an electrode layer is electrically connected the active layer and the portion of the active layer is exposed, and an ultraviolet light absorbing layer is disposed on the electrode layer. By using the advantage of the ultraviolet light absorbing layer with the range of visible light transmittance and with the component protection, preventing the optical characteristics of the thin film transistor from the outside moisture is achieved, and by adjusting the parameters in the thin film deposition process to change its conductivity.