Browsing by Author "Tsai, Chih-Peng"

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Investigation of Short-Channel Effects in 2D Negative-Capacitance Field-Effect Transistors
(2017-01-01)
You, Wei-Xiang
;
Tsai, Chih-Peng
;
Su, Pin
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
In this work, the short-channel effects (SCEs) in negative-capacitance FETs with 2D-material channel (2D-NCFET) are systematically investigated through numerical simulation corroborated by a theoretical 2D-NCFET subthreshold model. Our study reveals that, due to the impact of drain coupling on the negative-capacitance effect, the 2D-NCFET exhibits distinct SCEs. Additionally, for a given equivalent oxide thickness (EOT), the dielectric constant of the high-K interlayer can significantly alter the subthreshold characteristics of the short-channel 2D-NCFETs.
Short-Channel Effects in 2D Negative-Capacitance Field-Effect Transistors
(2018-04-01)
You, Wei-Xiang
;
Tsai, Chih-Peng
;
Su, Pin
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Through numerical simulations corroborated by an analytical subthreshold model considering drain coupling, this paper systematically investigates the short-channel effects in negative-capacitance FETs with 2D MoS2 channel (2D-NCFET). Our study indicates that, due to the impact of drain coupling on the negative-capacitance effect, the 2D-NCFET exhibits distinct short-channel behaviors such as improved average subthreshold swing and threshold-voltage roll-up with decreasing gate length. In addition, the fringe field through the high-k interlayer dielectric can significantly alter the subthreshold characteristics of the short-channel 2D-NCFET, and henceneeds to be carefully taken into account. Our studymay provide insights for device design using negative-capacitance FETs.