Investigation of Short-Channel Effects in 2D Negative-Capacitance Field-Effect Transistors

Abstract

In this work, the short-channel effects (SCEs) in negative-capacitance FETs with 2D-material channel (2D-NCFET) are systematically investigated through numerical simulation corroborated by a theoretical 2D-NCFET subthreshold model. Our study reveals that, due to the impact of drain coupling on the negative-capacitance effect, the 2D-NCFET exhibits distinct SCEs. Additionally, for a given equivalent oxide thickness (EOT), the dielectric constant of the high-K interlayer can significantly alter the subthreshold characteristics of the short-channel 2D-NCFETs.