Investigation of Short-Channel Effects in 2D Negative-Capacitance Field-Effect Transistors

dc.citation.epage	0	en_US
dc.citation.spage	0	en_US
dc.citation.woscount	0	en_US
dc.contributor.author	You, Wei-Xiang	en_US
dc.contributor.author	Tsai, Chih-Peng	en_US
dc.contributor.author	Su, Pin	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.date.accessioned	2019-05-02T00:26:47Z
dc.date.available	2019-05-02T00:26:47Z
dc.date.issued	2017-01-01	en_US
dc.description.abstract	In this work, the short-channel effects (SCEs) in negative-capacitance FETs with 2D-material channel (2D-NCFET) are systematically investigated through numerical simulation corroborated by a theoretical 2D-NCFET subthreshold model. Our study reveals that, due to the impact of drain coupling on the negative-capacitance effect, the 2D-NCFET exhibits distinct SCEs. Additionally, for a given equivalent oxide thickness (EOT), the dielectric constant of the high-K interlayer can significantly alter the subthreshold characteristics of the short-channel 2D-NCFETs.	en_US
dc.identifier.isbn	978-1-5386-3766-1	en_US
dc.identifier.issn	2573-5926	en_US
dc.identifier.journal	2017 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S)	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/151724
dc.identifier.wosnumber	WOS:000463041500026	en_US
dc.language.iso	en_US	en_US
dc.title	Investigation of Short-Channel Effects in 2D Negative-Capacitance Field-Effect Transistors	en_US
dc.type	Proceedings Paper	en_US

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