Browsing by Author "Tseng, Sheng-Che"

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16.4 GHz SiGe BiCMOS Sub-Harmonic Mixer With Reactive I/Q Generators in RF and LO Paths
(2009)
Tseng, Sheng-Che
;
Syu, Jin-Siang
;
Su, Jen-Yi
;
Wei, Hung-Ju
;
Meng, Chinchun
This paper demonstrates a high-frequency 0.35-mu m SiGe BiCMOS sub-harmonic downconverter with reactive in-phase and quadrature-phase (I/Q) generators. Two reactive I/Q generators are integrated in our work to provide differential quadrature RI and LO signals. The I/Q sub-harmonic downconverter with single-ended LO, RI, and IF (IM) ports has a conversion gain of 1 dB, IP(1dB) of -10 dBm, IIP(3) of 0 dBm and IIP(2) of 21 dBm at 16.4 GHz. The magnitude and phase errors between the I and Q channels are 1.34% and 0.6 degrees, respectively. The dc power consumption of this I/Q mixer without output buffers is approximately 5 mW.
.2.4 GHz divide-by-256 similar to 271 single-ended frequency divider in standard 0.35-mu m CMOS technology
(2005)
Tseng, Sheng-Che
;
Meng, Chinchun
;
Li, Shao-Yu
;
Su, Jen-Yi
;
Huang, Guo-Wei
This paper demonstrates a low-cost 2.4 GHz single-ended frequency divider with the divide-by-value from 256 to 271 in standard 0.35-um 2P4M CMOS technology. This frequency divider is composed of a synchronous CML divide-by4/5 prescaler, an asynchronous TSPC TFF divide-by-64 divider and digital control circuitry. This proposed divider is single-ended and compatible to the single-ended low-phase-noise Colpitts VCO. The operating frequency range of the divider is from 400 MHz to 2.9 GHz. Most of input sensitivity levels are about -10 dBm and the lowest level is -25 dBm at 2.4 GHz. Its core power consumption is about 28 mW. The chip size is 1.20.7 mm(2).
A 2.4, 5.2, and 5.7 GHz CMFB gilbert downconverter with low-voltage cascode current mirror input stage
(2006-11-01)
Tseng, Sheng-Che
;
Meng, Chinchun
;
Huang, Guo-Wei
;
電信工程研究所
;
Institute of Communications Engineering
A triple-band (2.4, 5.2, and 5.7 GHz) CMFB downconversion micromixer with a low-voltage cascode current mirror RF input stage has been demonstrated by the 0.18-mu m CMOS technology in this letter. Micromixer has a single-ended RF input stage, the CMFB topology is adopted to improve the conversion gain, and a differential-to-single output buffer is used to convert the differential output of the mixer into a single-ended output. The fully integrated downconversion micromixer has the conversion gain of 12 dB, LO-to-IF isolation of 43 dB, LO-to-RF isolation of 48 dB, and RF-to-IF isolation of 18 dB at 2.4 GHz. The mixer has the conversion gain of 7.5 dB, LO-to-IF isolation of 54 dB, LO-to-RF isolation of 49.5 dB, and RF-to-IF isolation of 25 dB at 5.7 GHz. The total quiescent current consumption of the circuit is 7.6 mA. (c) 2006 Wiley Periodicals, Inc.
A physics-based transit time model for GaInP/GaAs HBT devices
(2005)
Tseng, Sheng-Che
;
Meng, Chinchun
;
Chen, Wei-Yu
;
Su, Jen-Yi
;
電信工程研究所
A compact physics-based transit time model has been established for the GaInP/GaAs HBT device. The VBIC model fails to describe the transit time frequency versus bias (I(C), V(CE)) especially at low and medium current regimes. Starting with the HICUM model, we introduce a new time constant to describe the transit time frequency versus bias (I(C), V(CE)) more precisely. This model has obvious advantage over the VBIC model to show the relation between the f(t) versus bias (I(C), V(CE)) in the low and medium current regimes for GaInP/GaAs HBT devices.
A silicon monolithic phase-inverter rat-race coupler using spiral coplanar striplines and its application in a broadband Gilbert mixer
(2008-08-01)
Tseng, Sheng-Che
;
Meng, Chinchun
;
Chang, Chia-Hung
;
Chang, Shih-Hsien
;
Huang, Guo-Wei
This paper realized a broadband uniplanar phase-inverter rat-race coupler using a standard silicon process, and then analyzed this coupler under a lossy condition. A phase inverter is employed in this coupler, not only to extend the operation bandwidth, but also to generate balanced outputs by providing equal lossy paths, while symmetrical spiral-shaped coplanar striplines (CPSs) are also utilized to shrink the coupler size, as well as to construct a phase inverter in the middle of one of spiral CPSs. The lossy CPS, when designed as a distortionless line, has a real characteristic impedance, and thus, perfect port matching of the coupler can be achieved at the center frequency. The operation frequency of this silicon monolithic rat-race coupler with the size of 0.5 mm(2) is extremely wide and ranges from 5 to 23 GHz. The dissipated loss, transmission coefficient, and isolation of the rat-race coupler are approximately 5.5, -8, and below -25 dB, respectively. In addition, a wideband Gilbert micromixer with an integrated uniplanar phase-inverter rat-race coupler at the local oscillator port is demonstrated using 0.35-mu m SiGe BiCMOS technology. This mixer works from 2.5 to 13 GHz with 12-dB conversion gain, -16-dBm IP(1) (dB), -4-dBm IIP(3), and 14-dB noise figure. The chip size of the mixer with an integrated coupler is approximately 1.4 mm x 1.4 mm.
Broadband Gilbert micromixer with an LO Marchand balun and a TIA output buffer
(2006)
Tseng, Sheng-Che
;
Meng, Chinchun
;
Chang, Chia-Hung
;
Wu, Chih-Kai
;
Hung, Guo-Wei
A single-ended wideband downeonversion Gilbert micromixer is demonstrated in this paper using 0.35-um SiGe BiCMOS technology. Because of the wideband matching property of the micromixer, it can perform broad frequency translation. The TIA is utilized in the IF stage while a broadband Marchand balun is employed not only to generate differential LO signals but also to reserve the wideband operation of the mixer. This singleended wideband mixer has the conversion gain of 15 dB, IP(1dB) of 17 dBm, and IIP(3) of -6.5 dBm and works from 3.5 to 14.5 GHz. The input return loss is below -14 dB and the chip size is 1x1 mm(2).
Dual-band adjustable and reactive I/Q generator with constant resistance for down- and up-converters
(2008-08-01)
Tseng, Sheng-Che
;
Meng, Chinchun
;
Lee, Yueh-Ting
;
電信工程研究所
;
Institute of Communications Engineering
Adjustable and reactive in-phase/quadrature (I/Q) generators with constant resistance are proposed for the first time in this paper with the properties of low loss, dual-band implementation, and high quadrature accuracy. The quadrature phase property and input matching of the I/Q generator can be achieved at all frequencies simultaneously by the constant-resistance I/Q generator. However, the magnitude balance of the dual-band T/Q generator is achieved at two designed frequencies. A 2.4/5.2-GHz I/Q down-converter and a 2.4/5.7-GHz single-sideband up-converter are fabricated using 0.35-mu m SiGe BiCMOS technology. The dual-band I/Q generator along with two single-to-differential amplifiers is integrated to provide differential quadrature local oscillator signals for dual-band mixers. The magnitude imbalance and phase error between the I and Q channels of the down-converter are < 1% and < 1 degrees, respectively, while the maximum sideband rejection ratio of the up-converter is up to 50 dB. Additionally, the operation bandwidth (sideband rejection ratio > 30 dB) is 200 MHz at 2.4 GHz and 720 MHz at 5.7 GHz.
GaInP/GaAs HBT sub-harmonic Gilbert mixers using stacked-LO and leveled-LO topologies
(2007-05-01)
Wu, Tzung-Han
;
Tseng, Sheng-Che
;
Meng, Chin-Chun
;
Huang, Guo-Wei
;
電信工程研究所
This paper discusses and demonstrates the most popular sub-harmonic Gilbert mixers in 2-mu m GaInP/GaAs HBT technology. High two local oscillators (2LO)-to-RF isolation is important to alleviate the self-mixing problem of the sub-harmonic mixer. The demonstrated GaInP/GaAs HBT stacked-local oscillator (LO) mixer topology has achieved the best 2LO-to-RF isolation when compared with the previous literature. On the other hand, the leveled-LO sub-harmonic mixers have advantages in terms of the high speed and low dc supply voltage at the cost of much larger LO pumping power. Among all the structures, the bottom-LO sub-harmonic mixer has the lowest current consumption and the simplest circuit structure at the expense of the 2LO-to-RF isolation.
Gilbert Mixers With Microwave Quadrature/Differential Generators: An Approach for Millimeter-Wave IC
(2009)
Meng, Chinchun
;
Tseng, Sheng-Che
;
電信工程研究所
;
Institute of Communications Engineering
Several microwave passive components can be integrated with active circuits in standard silicon processes for millimeter-wave applications. Passive components such as Marchand baluns, quadrature couplers, and rat-race hybrids are directly implemented on a standard low-resistivity (similar to 10 Omega xcm) silicon substrate for size compactness because of the high dielectric constant. New circuit design concepts such as balanced path loss and distortionless transmission lines are applied to tolerate the unavoidable loss and to maintain the functionality of components.
High gain CMOS Gilbert downconverter with wide-swing cascode current-mirror transconductor and load
(2007)
Tseng, Sheng-Che
;
Meng, Chinchun
;
Huang, Guo-Wei
;
電信工程研究所
;
Institute of Communications Engineering
A downconversion micrornixer with low-voltage cascode current mirrors at both transconductor and load stages has been implemented using the 0.18-mu m CMOS technology in this paper, This micromixer has a single-to-differential RF input transconductance stage formed by the NMOS wide-swing cascode current mirror. PMOS wide-swing cascode current mirror is also employed to improve conversion gain while a super source follower is used at the output to reduce the output impedance and to transfer more power to the load. The fully integrated downconverter functions at 7 GHz and has the high conversion gain of 16 dB and high LO-to-IF isolation of 50 dB at 1.8 V supply voltage. The current consumption of the mixer core is I m-A. Thanks to the low-voltage operation property of the wide-swing cascode current mirror, six transistors can be stacked within 1.8 V supply voltage.
Integrating passive components with active circuits using standard silicon process for millimeter-wave applications - (Invited paper)
(2008)
Meng, Chinchun
;
Tseng, Sheng-Che
;
電信工程研究所
;
Institute of Communications Engineering
Several passive components based on the quarter-wavelength transmission line can be integrated with active circuits for millimeter-wave applications. Passive components such as Marchand baluns, quadrature couplers, and rat-race hybrids are directly implemented on the standard low-resisitivity (similar to 10 Omega- cm) silicon substrate. New circuit design concepts such as balanced loss and distortionless transmission line are applied to tolerate the unavoidable loss and thus the size reduction is achieved because of the high effective dielectric constant.
Ka/Ku-Band pHEMT Gilbert Mixers With Polyphase and Coupled-Line Quadrature Generators
(2009-05-01)
Su, Jen-Yi
;
Tseng, Sheng-Che
;
Meng, Chinchun
;
Wu, Po-Yi
;
Lee, Yueh-Ting
In this paper, three kinds of Ka/Ku-band Gilbert mixers are demonstrated using 0.15-mu m AlGaAs/InGaAs pseudomorphic high electron mobility transistor technology. Thanks to the semiinsulating GaAs substrate, microwave passive components have a low-loss feature, and polyphase filters work up to higher frequencies. Highly accurate tantalum-nitride thin-film resistors utilized in polyphase filters result in perfect quadrature operation. Therefore, our proposed single-sideband up-converter operates at 15 GHz with a 63-dB sideband rejection ratio, and another 34-GHz in-phase/quadrature (I/Q) subharmonic down-converter reaches <0.4-dB magnitude and < 1 degrees phase errors. More than 50-dB local oscillator (LO) leakage suppression is achieved in the I/Q subharmonic mixer. On the other hand, a 40-GHz stacked-LO subharmonic mixer with a novel compensation technique is also proposed and demonstrated to improve LO speed and reduce the amount of transistors, as compared to previous work.
KU-BAND SiGe HBT I/Q SUBHARMONIC MIXER WITH REACTIVE QUADRATURE GENERATORS
(2010-07-01)
Tseng, Sheng-Che
;
Syu, Jin-Siang
;
Su, Jen-Yi
;
Wei, Hung-Ju
;
Meng, Chinchun
This article demonstrates a high-frequency 0.35-mu m SiGe HBT subharmonic downconverter with reactive in-phase and quadrature-phase (I/Q) generators. Two reactive I/Q generators are integrated in our work to provide differential quadrature RF and LO signal. The I/Q subharmonic downconverter with single-ended LO. RF. and IF (I/Q) ports has a conversion gain of 1 a. IP(1dB) of -10 dBm. IIP(3) of 0 dBm, and IIP(2) of 21 dBm at 16.4 GHz. The magnitude and phase errors between the I and Q channels are 1.34% and 0.6 degrees. respectively. The dc power consumption of this IIQ mixer without output buffers is approximately 5 mW. (C) 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1516-1520, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25281
Low-Phase-Noise SiGe HBT VCOs Using Trifilar-Transformer Feedback
(2008)
Meng, Chinchun
;
Syu, Jin-Siang
;
Tseng, Sheng-Che
;
Chang, Yu-Wen
;
Huang, Guo-Wei
The SiGe heterojunction bipolar transistor (HBT) voltage controlled oscillators (VCOs) using trifilar-transformer feedback at emitters, bases and collectors are demonstrated. The integrated trifilar transformer can allow dual voltage swings across the collectors and emitters of a cross-coupled differential pair and separate the bias between bases and collectors to optimize the output power. The tank inductance is also improved by the mutual coupling of the trifilar transformer. Thus, 191 dBc/Hz FOM (figure of merit) is achieved and is comparable to that of the state-of-the-art VCO.
Low-voltage GaInP/GaAs HBT wideband Gilbert downconverter using transformer RF balun
(2007)
Tseng, Sheng-Che
;
Meng, Chinchun
;
Wu, Chih-Kai
;
Huang, Guo-Wei
;
電信工程研究所
This paper demonstrates a low-voltage wideband downconverter along with an integrated transformer RF balun using the 2-mu m GaInP/GaAs HBT technology. This transformer is a symmetric type and plays a role as a single-to-differential balun. Without the parasitics between the transformer and the substrate, the transformer can work at higher frequencies. This transformer downconverter operates from 1.5 GHz to 14 GHz with around 20-dB conversion gain and 1.8-GHz IF 3-dB bandwidth. The frequency range of the mixing operation is wide and covers the digital video broadcasting via satellite (DVB-S) bands. This mixer hence is useful for DVB-S applications. Since there is no dc voltage drop on the transformer, the voltage supply of the mixer core is only 2.4 V and the current consumption is approximately 8.6 mA. The chip size of the entire mixer is 1 mm x 1 mm while the transformer occupies the estate of 150 mu m x 150 mu m.
Monolithic broadband Gilbert micromixer with an integrated Marchand balun using standard silicon IC process
(2006-12-01)
Tseng, Sheng-Che
;
Meng, Chinchun
;
Chang, Chia-Hung
;
Wu, Chih-Kai
;
Huang, Guo-Wei
A single-ended wideband downconversion Gilbert micromixer is demonstrated in this paper using 0.35-mu m SiGe BiCMOS technology. A transimpedance amplifier with resistive feedback is utilized in the IF stage while a broadband Marchand balun is employed to generate wideband differential local oscillator signals. The planar Marchand balun topology employed in this paper can generate truly balanced signals even in the presence of the lossy low-resistivity (similar to 10 Omega (.) cm) silicon substrate. A systematic approach to measure the frequency response of each individual stage in a Gilbert mixer is developed in this paper. This single-ended wideband mixer has the conversion gain of 15 dB, IP1dB of -19 dBm, IIP3 of -7 dBm, and the noise figure of 13 dB. The mixer works from 3.5 to 14.5 GHz.
Seven GHz high gain 0.18 mu m CMOS gilbert downconverter with wide-swing cascode current mirrors
(2008-02-01)
Tseng, Sheng-Che
;
Meng, Chinchun
;
Huang, Guo-Wei
;
電信工程研究所
;
Institute of Communications Engineering
A downconversion micromixer with low-voltage cascode current mirrors at both transconductor and load stages has been implemented using the 0.18-mu m CMOS technology in this article. This micromixer has a single-to-differential RF input transconductor formed by the NMOS wide-swing cascade current mirror, while the PMOS wide-swing cascode current mirror is also employed to improve conversion gain. A super source follower is used at the output to reduce the output impedance and to transfer more power to the load. This fully integrated downconverter has the high conversion gain of 16 dB and high LO-to-IF isolation of 50 dB at 7 GHz. The current consumption of the mixer core is 1 mA at 1.8 V supply voltage. Thanks to the low-voltage operation property of the wide-swing cascode current mirror, six transistors can be stacked within 1.8 V supply voltage. (c) 2007 Wiley Periodicals, Inc.
SiGe HBT Gilbert downconverter with an integrated miniaturized Marchand balun for UWB applications
(2007)
Tseng, Sheng-Che
;
Meng, Chinchun
;
Chang, Chia-Hung
;
Huang, Guo-Wei
;
電信工程研究所
A 15.5-dB conversion gain 0.35-mu m SiGe HBT Gilbert mixer with the lumped-element Marchand balun for 3.1 GHz to 10.6 GHz UWB applications is implemented using standard silicon processes. This mixer has the 1.5-GHz IF 3-dB bandwidth as well as the 15.8-dB noise figure. The balun size is only 0.25 mm x 0.5 mm. Because of the balanced structure of the Marchand balun, the magnitude imbalance and phase difference of outputs are below 1 dB and about 184 degrees, respectively. In the present of a lossy substrate, the dissipated loss of the balun is still less than 4 dB thanks to the advantage of the lumped-element technique. The total current consumption of the entire mixer is 13.9 mA at 5 V voltage supply while the chip size including probing pads is 1 mm x 0.9 mm.
Single-ended frequency divider with moduli of 256-271
(2006-10-01)
Tseng, Sheng-Che
;
Meng, Chinchun
;
Li, Shao-Yu
;
Su, Jen-Yi
;
Huang, Guo-Wei
This paper demonstrates a low-cost 2.4 GHz single-ended frequency divider with the divide-by-value from 256 to 271 in the standard 0.35-mu m 2P4M CMOS technology. This frequency divider is composed of a synchronous current mode logic divide-by-4/5 prescaler, an asynchronous true single-phase-clock toggle flip-flops divide-by-64 divider, and a digital control circuitry. This proposed divider is single-ended and compatible to the single-ended low-phase-noise Colpitts VCO. The operating frequency range of the divider is from 400 to 2.9 GHz. Most of the input sensitivity levels are about -10 dBm and the lowest level is -25 dBm at 2.4 GHz. Its core power consumption is about 28 mW. The chip size is 1.2 X 0.7 mm(2). (C) 2006 Wiley Periodicals, Inc.
True 50% Duty-Cycle High-Speed Divider with the Modulus of Odd Numbers
(2009)
Tseng, Sheng-Che
;
Wei, Hung-Ju
;
Syu, Jin-Siang
;
Meng, Chinchun
;
Tsung, Kuan-Chang
This paper proposes a true 50% duty-cycle highspeed prescaler with an odd modulus, based on current switchable D flip-flops. Each D flip-flop can sample data at the positive and negative clock edges, because of the changeable trigger mode. The proposed divide-by-N prescaler, with a 50% duty cycle, is formed as a ring with an N number of D flip-flops. Two types of 50% duty-cycle divide-by-five prescalers, the sample-hold-sample-hold-hold (SHSHH) prescaler and the sample-sample-hold-sample-hold (SSHSH) prescaler, are implemented using the 0.35 mu m SiGe HBT technology. The SHSHH divider has a better performance, up to 7 GHz, thanks to the synchronization of data and control signals.