Browsing by Author "Tseng, Y. Y."

Now showing 1 - 2 of 2

DC-RF performance improvement for strained 0.13 mu m MOSFETs mounted on a flexible plastic substrate
(2006)
Kao, H. L.
;
Chin, Albert
;
Liao, C. C.
;
Tseng, Y. Y.
;
McAlister, S. P.
By applying 0.7% tensile strain to the flexible die of a 0.13 mu m thin-body (40 mu m) Si MOSFET mounted on plastic, both the DC and RF performance have been improved. The current I(d,sat) was 14.3% higher, and f(T) increased from 103 to 118 GHz with NF(min) decreasing from 0.89 to 0.75 dB at 10 GHz. These improvements are comparable with those for SiN-capped 90 nm strained-Si nMOS and consistent with device simulations. The approach has the advantages of better RF passive devices on the insulating plastic substrate and low cost.
Strain enhanced DC-RF performance of 0.13 mu m nMOSFETs on flexible plastic substrate
(2006-07-06)
Chin, A.
;
Kao, H. L.
;
Kao, C. H.
;
Liao, C. C.
;
Tseng, Y. Y.
A 14.3% saturation current I-d,(sat) improvement and 0.75 dB minimum noise figure (NFmin) at 10 GHz were measured by applying similar to 0.7% tensile strain for 16 finger, 0.13 mu m RF MOSFETs with thin-body (40 mu m) substrate mounted on plastic. These excellent results for mechanical-strain on DC-RF MOSFETs are better than those of SiN-capped 90 nm strained-Si nMOSFETs and consistent with device simulations.