Browsing by Author "Tsern, Wen-Chung"

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A Novel Metamorphic High Electron Mobility Transistors with (In(x)Ga(1-x)As)(m)/(InAs)(n) Superlattice Channel Layer for Millimeter-Wave Applications
(2009)
Kuo, Chien-I
;
Hsu, Heng-Tung
;
Lu, Jung-Chi
;
Chang, Edward Yi
;
Wu, Chien-Ying
High performance MHEMTs using (In(x)Ga(1-x)As)(m)/(InAs)(n) superlattice structure as a channel layer have been fabricated successfully. These HEMTs with 80 nm gate length exhibit high drain current density of 392 mA/mm at drain bias 1.0 V and transconductance of 991 mS/mm at drain bias 1.2 V. Comparison with regular In(x)Ga(1-x)As channel, the superlattice channel HEMTs show an outstanding performance because of high electron mobility, and better carrier confinement in the (In(x)Ga(1-x)As)(m)/(InAs)(n) channel layer. The current gain cutoff frequency (f(T)) and maximum oscillation frequency (f(max)) were extracted to be 304 GHz and 162 GHz, respectively. The device demonstrated a 0.75 dB noise figure with an associated gain 9.6 dB at 16 GHz. The excellent device performance shows that the superlattice channel can be practically used for high-frequency and millimeter-wave application.
InAs high electron mobility transistors with buried gate for ultralow-power-consumption low-noise amplifier application
(2008-09-01)
Kuo, Chien-I
;
Hsu, Hen-Tung
;
Chang, Edward Yi
;
Miyamoto, Yasuyuki
;
Tsern, Wen-Chung
An InAs/In(0.3)As composite channel high-electron-mobility transistor (HEMT) fabricated using the gate sinking technique was realized for ultralow-power-consumption low-noise application. The device has a very high transconductance of 100 mS/mm at at drain voltage of 0.5 V. The saturated drain-Source current of the device is 1066 mA/mm. A current grin cutoff frequency (f(T)) of 113 GHz and a maximum oscillation frequency (f(max)) of 110GHz were achieved at only drain bias volume V(ds) = 0.1V. The 0.08 x 40 mu m(2) device demonstrated a minimum noise figure of 0.82 dB and a 14 dB associated gain at 17GHz with 1.14mW DC power consumption.
RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (In(x)Ga(1-x)As)(m)/(InAs)(n) Superlattice-Channel Structure for Millimeter-Wave Applications
(2010-07-01)
Kuo, Chien-I
;
Hsu, Heng-Tung
;
Chen, Yu-Lin
;
Wu, Chien-Ying
;
Chang, Edward Yi
High-performance metamorphic high-electron mobility transistors (MHEMTs) using an (In(x)Ga(1-x)As)(m)/(InAs)(n) superlattice structure as a channel layer have been fabricated successfully. These HEMTs with 80-nm gate length exhibited a high drain current density of 392 mA/mm and a transconductance of 991 mS/mm at 1.2-V drain bias. Compared with a regular In(x)Ga(1-x)As channel, the superlattice-channel HEMTs showed an outstanding performance due to the high electron mobility and better carrier confinement in the (In(x)Ga(1-x)As)(m)/(InAs)(n) channel layer. When biased at 1.2 V, the current gain cutoff frequency (f(T)) and the maximum oscillation frequency (f(max)) were extracted to be 304 and 162 GHz, respectively. As for noise performance, the device demonstrated a 0.75-dB minimum noise figure(NF(min)) with an associated gain of 9.6 dB at 16 GHz. Such superior performance has made the devices with a superlattice channel well suitable for millimeter-wave applications.
RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (InxGa1-xAs)(m)/(InAs)(n) Superlattice-Channel Structure for Millimeter-Wave Applications
(2010-07-01)
Kuo, Chien-I
;
Hsu, Heng-Tung
;
Chen, Yu-Lin
;
Wu, Chien-Ying
;
Chang, Edward Yi
High-performance metamorphic high-electron mobility transistors (MHEMTs) using an (InxGa1-xAs)(m)/(InAs)(n) superlattice structure as a channel layer have been fabricated successfully. These HEMTs with 80-nm gate length exhibited a high drain current density of 392 mA/mm and a transconductance of 991 mS/mm at 1.2-V drain bias. Compared with a regular InxGa1-xAs channel, the superlattice-channel HEMTs showed an outstanding performance due to the high electron mobility and better carrier confinement in the (InxGa1-xAs)(m)/(InAs)(n) channel layer. When biased at 1.2 V, the current gain cutoff frequency (f(T)) and the maximum oscillation frequency (f(max)) were extracted to be 304 and 162 GHz, respectively. As for noise performance, the device demonstrated a 0.75-dB minimum noise figure(NFmin) with an associated gain of 9.6 dB at 16 GHz. Such superior performance has made the devices with a superlattice channel well suitable for millimeter-wave applications.