Browsing by Author "Tseung-Yuen"

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Ferroelectric memory structure and fabrication method thereof
(2006-03-21)
Tseng
;
Tseung-Yuen
;
Lee
;
Shean Yiah
A ferroelectric memory structure is disclosed. The ferroelectric memory structure includes a substrate, an insulating layer formed on the substrate, a plurality of oxide electrodes formed on the insulating layer, a ferroelectric layer formed on the insulating layer and the plurality of oxide electrodes, and a plurality of metallic electrodes formed on the ferroelectric layer and corresponding to the plurality of the oxide electrodes.
Gate controlled field emission triode and process for fabricating the same
(2010-04-27)
Tseng
;
Tseung-Yuen
;
Lee
;
Chia-Ying
;
Li
This invention relates to a process for fabricating ZnO nanowires with high aspect ratio at low temperature, which is associated with semiconductor manufacturing process and a gate controlled field emission triode is obtained. The process comprises providing a semiconductor substrate, depositing a dielectric layer and a conducting layer, respectively, on the semiconductor substrate, defining the positions of emitter arrays on the dielectric layer and conducting layer, depositing an ultra thin ZnO film as a seeding layer on the substrate, growing the ZnO nanowires as the emitter arrays by using hydrothermal process, and etching the areas excluding the emitter arrays, then obtaining the gate controlled field emission triode.