Browsing by Author "Tuan, A"

Now showing 1 - 4 of 4

Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide process
(2002-08-01)
Chang, TY
;
Lei, TF
;
Chao, TS
;
Chen, SW
;
Kao, LM
In our previous study, using NF3 annealed poly-Si to improve gate oxide integrity for Co-silicide process has been proposed [SSDM, 1998, p. 164]. It is very interesting and important to know the mechanism of both F and N incorporation in the SiO2 and Co-salicide. In this study, F and/or N will be implanted into poly-Si with/without Co-salicide process, to identify the interaction of N and F in the SiO2 and Co-salicide process. In our work, we will describe the optimized structure and F/N incorporation for Co-silicide process. (C) 2002 Elsevier Science Ltd. All rights reserved.
Improvement of ultra-thin 3.3 nm thick oxide for co-salicide process using NF3 annealed poly-gate
(1999-04-01)
Chang, TY
;
Lei, TF
;
Chao, TS
;
Huang, CT
;
Chen, SK
To get high quality ultra-thin oxide is very important and difficult for IC industry now. Using NF3 annealed poly-Si gate to improve gate oxide integrity is described. However, reducing fate, source and drain parasitic resistance with gate lengths down to 0.2 mu m is another key point. Co-salicide process can successfully reduce the gate resistance even for a gate length of 0.075 mu m. Although, Co-salicide process has a leakage problem. Using NF3 annealing to prevent Co diffusing into gate oxide is described too. Results show that the optimal NF3 annealing significantly improves electrical characteristics of ultra-thin oxide and Co-salicide process in terms of leakage current and breakdown field, as compared to the samples without NF3 annealing.
Low contact resistance of poly-plug structure by in-situ HF-vapour cleaning
(2000-04-13)
Chen, JH
;
Lei, TF
;
Chao, TS
;
Su, TP
;
Huang, SJ
A low contact-resistance poly-plug structure realised by in-situ HF-vapour cleaning in a clustered tool is described. The native oxide in the contact area can be efficiently removed by the combination of an HF-dipping and in-situ HF-vapour cleaning process, resulting in a low specific contact resistance.
Stabilizing dielectric constant of fluorine-doped SiO2 film by N2O and NH3 plasma post-treatment
(1997-10-31)
Mei, YJ
;
Chang, TC
;
Chang, SJ
;
Pan, FM
;
Chen, MSK
Fluorine doped oxide (SiO2-xFx) films have been found to exhibit a low dielectric constant. However, the critical issue about SiO2-xFx is its low resistance to moisture which causes the dielectric constant of the film to increase with time. In this work, N2O and NH3 plasma post treatments are applied to as-deposited SiO2-xFx films. It has been observed that NH3 plasma post-treatments of SiO2-xFx are quite efficient at blocking moisture. The dielectric constant and stress values of the SiO2-xFx films after the N2O and NH3 plasma post-treatments are very stable. The disadvantage of N2O plasma post-treatment is that the dielectric constant of the SiO2-xFx film increases from 3.21 to 3.6 due to fluorine desorption from the SiO2-xFx network. On the other hand, NH3 plasma post-treatment is more efficient at blocking moisture and keeping the low dielectric constant unchanged due to surface nitridation of the SiO2-xFx film. (C) 1997 Elsevier Science S.A.