Browsing by Author "Tung, Teng-Fu"

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Improved Performance of MIC Poly-Si TFTs Using Driven-in Nickel Induced Crystallization (DIC) with Cap SiO2 by F implantation
(2010)
Lai, Ming-Hui
;
Wu, YewChung Sermon
;
Tung, Teng-Fu
;
Wu, Hung-Yu
;
材料科學與工程學系
A cap oxide layer was employed to substantially decrease nickel residues and passivate the trap states of the devices. F+ implantation was used to drive Ni in alpha-Si layer to induce crystallization (DIC) process with cap oxide to reduce Ni concentration and minimize the trap-state density. As a result, DIC-TFT with cap oxide exhibit higher field-effect mobility, lower subthreshold slope, lower threshold voltage, higher on/off current ratio, and lower trap-state density (N-t) compared with conventional MIC TFTs.