Browsing by Author "Volodin, V. A."

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Atomic and Electronic Structures of a-SiNx:H
(2019-11-01)
Gritsenko, V. A.
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Kruchinin, V. N.
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Prosvirin, I. P.
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Novikov, Yu N.
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Chin, A.
The atomic structure and the electronic spectrum of a-SiNx:H films, which are grown by plasmachemical deposition with varied ammonia and monosilane flow rates, are studied. As a result of varied flow rates, stoichiometric parameter x is changed over wide limits, from 0.73 to 1.33. The films are analyzed by structural and optical techniques to determine stoichiometric parameter x and its influence on the valence band top and the band gap in the density of states. The experimental and calculated electronic structure parameters of a-SiNx are compared, and good agreement between them is achieved over wide film composition (parameter x) limits. The experimental data obtained can be used to simulate the electron transport characteristics in nonstoichiometric silicon nitride films, which is important for creating memristors based on them.
Local Oscillations of Silicon-Silicon Bonds in Silicon Nitride
(2018-05-01)
Volodin, V. A.
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Gritsenko, V. A.
;
Chin, A.
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交大名義發表
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National Chiao Tung University
Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si3N4) reveal a contribution due to local oscillations of silicon-silicon (Si-Si) bonds. This observation directly confirms that the almost stoichiometric a-Si3N4 contains Si-Si bonds, which, according to theoretical predictions, act as electron and hole traps that are responsible for the memory effect in Si3N4.
Memristor effect in GeO[SiO2] and GeO[SiO] solid alloys films
(2019-06-10)
Volodin, V. A.
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Kamaev, G. N.
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Gritsenko, V. A.
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Gismatulin, A. A.
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Chin, A.
The p-Si(or n-Si)/GeO[SiO2] (or GeO[SiO])/indium-tin-oxide (ITO) structures were fabricated by simultaneous evaporation of GeO2 and SiO2 (or SiO) powders in high vacuum and further deposition of ITO contacts using the magnetron sputtering technique. The structural properties of the GeO[SiO2] and GeO[SiO] films were studied using FTIR and Raman spectroscopy. According to Raman data, the GeO[SiO] films deposited at a temperature of 100 degrees C contain amorphous Ge clusters. Their current-voltage characteristics were measured in the air atmosphere, and resistive switching (memristor effect) was observed in structures without a preliminary forming procedure. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport in the high-resistive state and the low-resistive state of memristors based on GeO[SiO2] or GeO[SiO] films.