Browsing by Author "WU, PF"
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Item type:Item, LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF SILICON-CARBIDE THIN-FILMS FROM ORGANOPOLYSILANES(1991-06-01) ;CHIU, HT ;WU, PF ;交大名義發表 ;應用化學系National Chiao Tung University(Me3Si)2SiMe2, (Me3Si)3SiMe and (Me3Si)4Si were used as precursors for the deposition of polycrystalline beta-SiC thin films on silicon substrates at 1000-1200-degrees-C in a low-pressure hot-wall chemical vapor deposition reactor. The thin films were analyzed by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy.