Browsing by Author "Wang, Chao-Kei"
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Item type:Item, Enhanced fight transmission for Si solar cells using anti-reflector of mesoporous silica with low refractive index(2007) ;Shieh, Jia-Min ;Wang, Chao-Kei ;Wu, Shich-Chuan ;Ni, Wei-XinKuo, Hao-ChungMesoporus silica dielectrics, which revealed low refractive index (n similar to 1.27), were introduced together with Si3N4 layers to be double-layer-based graded-refractive-index ant-reflectors for silicon solar-cells. Enhanced solar-light transmission increased conversion efficiency of Si solar panels by 20%.Item type:Item, Enhanced solar-light transmission by broadband anti-reflective structure with mesoporous silica of low refractive index(2008) ;Wang, Chao-Kei ;Shieh, Jia-Min ;Wu, Shich-Chuan ;Yu, Wen-ChienKuo, Hao-ChungMesoporus silica dielectrics, which revealed low refractive index (n similar to 1.26), were introduced together with Si3N4 layers to be double-layer-based graded-refractive-index ant-reflectors for silicon solar-cells. Enhanced solar-light transmission increased conversion efficiency of Si solar panels by 4%.Item type:Item, Near Infrared Silicon Quantum Dots MOSFET Detector(2009-01-01) ;Shieh, Jia-Min ;Yu, Wen-Chien ;Wang, Chao-Kei ;Dai, Bau-TongKuo, Hao-ChungFully Si-based MOSFET photodetector was demonstrated at optical telecommunication wavelengths by using a gate dielectric stack comprising of a Si quantum dots film. Illumination at wavelengths lambda=1.55 mu m, photoresponse as high as 2.0A/W was measured. (C) 2009 Optical Society of AmericaItem type:Item, Near-infrared silicon quantum dots metal-oxide-semiconductor field-effect transistor photodetector(2009-06-15) ;Shieh, Jia-Min ;Yu, Wen-Chien ;Huang, Jung Y. ;Wang, Chao-KeiDai, Bau-TongA fully silicon-based metal-oxide-semiconductor field-effect transistor is demonstrated for the detection of near-infrared light. Si nanocrystals (nc-Si) are synthesized in the nanopore channels of mesoporous silica (MS) inserted between two oxide layers to form a complete gate structure of polycrystalline Si/SiO(2)/nc-Si-in-MS/SiO(2) with a polycrystalline Si electrode. Illuminating the gate with near-infrared light, a photoresponsivity as high as 2.8 A/W at 1.55 mu m can be achieved. The improved photoresponsivity is attributed to from optical transitions via interface states and a current amplification mechanism of the device.Item type:Item, Nonvolatile memory with switching interfacial polar structures of nano Si-in-mesoporous silica(2009-10-05) ;Shieh, Jia-Min ;Huang, Jung Y. ;Yu, Wen-Chien ;Huang, Jian-DaWang, Yi-ChaoWe show an artificially engineered electret with Si nanocrystals embedded in mesoporous silica for nonvolatile memory. We attribute the polarization to from polar layers lying at the interfaces between one-side bonded Si nanocrystals and mesoporous silica matrix. Under external field, the Si nanocrystals could be displaced in the porechannels causing displaced charge distributions and therefore a field-controllable electric polarization. Nonvolatile memory is demonstrated with a metal-oxide-semiconductor field-effect transistor. (C) 2009 American Institute of Physics. [doi:10.1063/1.3240888]Item type:Item, Optical sum-frequency generation and Ferroelectric-like Switching in Si-O Polar Structures(2009-01-01) ;Shieh, Jia-Min ;Yu, Wen-Chien ;Huang, Jung Y. ;Wang, Yi-ChaoChen, Ching-WeiOptical sum-frequency generation and ferroelectric-like switching in Si-O polar structures comprised of Si nanocrystals (nc-Si) in mesoporous silica was reported and attributed to polar layers lying at the interfaces between one-side bonded nc-Si and host. (C) 2009 Optical Society of AmericaItem type:Item, Thin Film Silicon Solar Cell Fabricated at 100 degrees C by High Density Plasma for Flexible Photovoltaic Application(2010-01-01) ;Shen, Chang-Hong ;Shieh, Jia-Min ;Kuo, Hao-Chung ;Huang, Jung Y.Yu, Wen-ChienRecord fabrication temperature, 100 degrees C, of a single junction amorphous Si solar cell was demonstrated by a high-density plasma method. Present solar cell revealed conversion efficiency of 7.4% at 200 degrees C (4.1% at 135 degrees C). (C) 2009 Optical Society of America